Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications

A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different g...

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Detalles Bibliográficos
Autores: García, Héctor, Castán, Helena, Dueñas, Salvador, Bailón, Luis, García Hernansanz, Rodrigo, Olea Ariza, Javier, Prado Millán, Álvaro Del, Martil De La Plaza, Ignacio
Tipo de recurso: artículo
Fecha de publicación:2016
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/24594
Acceso en línea:https://hdl.handle.net/20.500.14352/24594
Access Level:acceso abierto
Palabra clave:537
Interface
Deffects
Voltage
Layer.
Electricidad
Electrónica (Física)
2202.03 Electricidad
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oai_identifier_str oai:docta.ucm.es:20.500.14352/24594
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repository_id_str
spelling Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applicationsGarcía, HéctorCastán, HelenaDueñas, SalvadorBailón, LuisGarcía Hernansanz, RodrigoOlea Ariza, JavierPrado Millán, Álvaro DelMartil De La Plaza, Ignacio537InterfaceDeffectsVoltageLayer.ElectricidadElectrónica (Física)2202.03 ElectricidadA complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice.SpringerUniversidad Complutense de Madrid20162016-07-1620162016-07-16journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/24594reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Atribución 3.0 Españahttps://creativecommons.org/licenses/by/3.0/es/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/245942026-06-02T12:44:21Z
dc.title.none.fl_str_mv Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications
title Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications
spellingShingle Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications
García, Héctor
537
Interface
Deffects
Voltage
Layer.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications
title_full Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications
title_fullStr Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications
title_full_unstemmed Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications
title_sort Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications
dc.creator.none.fl_str_mv García, Héctor
Castán, Helena
Dueñas, Salvador
Bailón, Luis
García Hernansanz, Rodrigo
Olea Ariza, Javier
Prado Millán, Álvaro Del
Martil De La Plaza, Ignacio
author García, Héctor
author_facet García, Héctor
Castán, Helena
Dueñas, Salvador
Bailón, Luis
García Hernansanz, Rodrigo
Olea Ariza, Javier
Prado Millán, Álvaro Del
Martil De La Plaza, Ignacio
author_role author
author2 Castán, Helena
Dueñas, Salvador
Bailón, Luis
García Hernansanz, Rodrigo
Olea Ariza, Javier
Prado Millán, Álvaro Del
Martil De La Plaza, Ignacio
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Interface
Deffects
Voltage
Layer.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Interface
Deffects
Voltage
Layer.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice.
publishDate 2016
dc.date.none.fl_str_mv 2016
2016-07-16
2016
2016-07-16
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/24594
url https://hdl.handle.net/20.500.14352/24594
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución 3.0 España
https://creativecommons.org/licenses/by/3.0/es/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución 3.0 España
https://creativecommons.org/licenses/by/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Springer
publisher.none.fl_str_mv Springer
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869425802610737152
score 15,301629

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