Artificial Graphene Spin Polarized Electrode for Magnetic Tunnel Junctions

2D materials offer the ability to expose their electronic structure to manipulations by a proximity effect. This could be harnessed to craft properties of 2D interfaces and van der Waals heterostructures in devices and quantum materials. We explore the possibility to create an artificial spin polari...

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Detalles Bibliográficos
Autores: Zatko, Victor, Galceran, Regina, Galbiati, Marta, Peiro, Julian, Godel, Florian, Kern, Lisa-Marie, Perconte, David, Ibrahim, Fatima, Hallal, Ali, Chshiev, Mairbek, Martínez Perea, Benjamín, Frontera, Carlos, Balcells, Lluis, Kidambi, Piran R., Robertson, John, Hofmann, Stephan, Collin, Sophie, Petroff, Frédéric, Martin, Marie-Blandine, Dlubak, Bruno, Seneor, Pierre
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2023
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/287345
Acceso en línea:http://hdl.handle.net/10261/287345
https://api.elsevier.com/content/abstract/scopus_id/85144418874
Access Level:acceso abierto
Palabra clave:2D materials
Graphene
Proximity effects
Spin polarization
Descripción
Sumario:2D materials offer the ability to expose their electronic structure to manipulations by a proximity effect. This could be harnessed to craft properties of 2D interfaces and van der Waals heterostructures in devices and quantum materials. We explore the possibility to create an artificial spin polarized electrode from graphene through proximity interaction with a ferromagnetic insulator to be used in a magnetic tunnel junction (MTJ). Ferromagnetic insulator/graphene artificial electrodes were fabricated and integrated in MTJs based on spin analyzers. Evidence of the emergence of spin polarization in proximitized graphene layers was observed through the occurrence of tunnel magnetoresistance. We deduced a spin dependent splitting of graphene's Dirac band structure (∼15 meV) induced by the proximity effect, potentially leading to full spin polarization and opening the way to gating. The extracted spin signals illustrate the potential of 2D quantum materials based on proximity effects to craft spintronics functionalities, from vertical MTJs memory cells to logic circuits.

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