Spin hall effect and weak antilocalization in graphene/transition metal dichalcogenide heterostructures
We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocalization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using realistic tight-binding models parametrized from ab initio ca...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:194903 |
| Acceso en línea: | https://ddd.uab.cat/record/194903 https://dx.doi.org/urn:doi:10.1021/acs.nanolett.7b02364 |
| Access Level: | acceso abierto |
| Palabra clave: | Graphene Proximity effects Spin Hall effect Spin transport Transition metal dichalcogenide Weak antilocalization |
| Sumario: | We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocalization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using realistic tight-binding models parametrized from ab initio calculations. The graphene/WS system is found to maximize spin proximity effects compared to graphene on MoS, WSe, or MoSe with a crucial role played by disorder, given the disappearance of SHE signals in the presence of strong intervalley scattering. Notably, we found that stronger WAL effects are concomitant with weaker charge-to-spin conversion efficiency. For further experimental studies of graphene/TMDC heterostructures, our findings provide guidelines for reaching the upper limit of spin current formation and for fully harvesting the potential of two-dimensional materials for spintronic applications. |
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