Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons

Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I/I ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-b...

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Autores: Marconcini, Paolo|||0000-0003-3714-0026, Cresti, Alessandro|||0000-0002-1326-2515, Roche, Stephan|||0000-0003-0323-4665
Formato: artículo
Fecha de publicación:2018
País:España
Recursos:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:203040
Acesso em linha:https://ddd.uab.cat/record/203040
https://dx.doi.org/urn:doi:10.3390/ma11050667
Access Level:acceso abierto
Palavra-chave:ION/IOFF ratio
Boron doping
Channel length
Graphene ribbon
Mobility gap
Transistor
Transport
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spelling Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbonsMarconcini, Paolo|||0000-0003-3714-0026Cresti, Alessandro|||0000-0002-1326-2515Roche, Stephan|||0000-0003-0323-4665ION/IOFF ratioBoron dopingChannel lengthGraphene ribbonMobility gapTransistorTransportSubstitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I/I ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green's function approach, we demonstrate a promising increase of the I/I ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior. 22018-01-0120182018-01-01Articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/203040https://dx.doi.org/urn:doi:10.3390/ma11050667reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengopen accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.https://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2030402026-06-06T12:50:31Z
dc.title.none.fl_str_mv Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons
title Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons
spellingShingle Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons
Marconcini, Paolo|||0000-0003-3714-0026
ION/IOFF ratio
Boron doping
Channel length
Graphene ribbon
Mobility gap
Transistor
Transport
title_short Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons
title_full Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons
title_fullStr Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons
title_full_unstemmed Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons
title_sort Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons
dc.creator.none.fl_str_mv Marconcini, Paolo|||0000-0003-3714-0026
Cresti, Alessandro|||0000-0002-1326-2515
Roche, Stephan|||0000-0003-0323-4665
author Marconcini, Paolo|||0000-0003-3714-0026
author_facet Marconcini, Paolo|||0000-0003-3714-0026
Cresti, Alessandro|||0000-0002-1326-2515
Roche, Stephan|||0000-0003-0323-4665
author_role author
author2 Cresti, Alessandro|||0000-0002-1326-2515
Roche, Stephan|||0000-0003-0323-4665
author2_role author
author
dc.subject.none.fl_str_mv ION/IOFF ratio
Boron doping
Channel length
Graphene ribbon
Mobility gap
Transistor
Transport
topic ION/IOFF ratio
Boron doping
Channel length
Graphene ribbon
Mobility gap
Transistor
Transport
description Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I/I ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green's function approach, we demonstrate a promising increase of the I/I ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior.
publishDate 2018
dc.date.none.fl_str_mv 2
2018-01-01
2018
2018-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/203040
https://dx.doi.org/urn:doi:10.3390/ma11050667
url https://ddd.uab.cat/record/203040
https://dx.doi.org/urn:doi:10.3390/ma11050667
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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