Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons
Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I/I ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-b...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:203040 |
| Acceso en línea: | https://ddd.uab.cat/record/203040 https://dx.doi.org/urn:doi:10.3390/ma11050667 |
| Access Level: | acceso abierto |
| Palabra clave: | ION/IOFF ratio Boron doping Channel length Graphene ribbon Mobility gap Transistor Transport |
| Sumario: | Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I/I ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green's function approach, we demonstrate a promising increase of the I/I ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior. |
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