Interpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of traps

Charge carrier transport in disordered organic semiconductors, performed in electronic devices such as optoelectronic and photovoltaic ones, is usually affected by an exponential distribution of localized states in the band-gap (traps) under space-charge limited current. In this paper, we provide a...

ver descrição completa

Detalhes bibliográficos
Autores: Hinojo Montero, José María, Bisquert, Juan
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2011
País:España
Recursos:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:idus.us.es:11441/126834
Acesso em linha:https://hdl.handle.net/11441/126834
https://doi.org/10.1063/1.3622615
Access Level:acceso abierto
Palavra-chave:Frequency domain analysis
Band gaps
Electronic device
Carrier mobility
id ES_fc20ea02161e86ad9feaa8f813878f4d
oai_identifier_str oai:idus.us.es:11441/126834
network_acronym_str ES
network_name_str España
repository_id_str
spelling Interpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of trapsHinojo Montero, José MaríaBisquert, JuanFrequency domain analysisBand gapsElectronic deviceCarrier mobilityCharge carrier transport in disordered organic semiconductors, performed in electronic devices such as optoelectronic and photovoltaic ones, is usually affected by an exponential distribution of localized states in the band-gap (traps) under space-charge limited current. In this paper, we provide a full analysis for the trap-controlled transport of the single-carrier device in the frequency domain. Trap-limited mobility is interpreted in terms of the classical multiple-trapping picture with one transport state and the trapping-detrapping dynamics of the exponential density of traps. This allows us to provide a suitable explanation of the usual experimental features of the mobility dependence on voltage as along with the capacitance spectra.Ministerio de Economía y Competitividad HOPE CSD2007-00007Generalitat Valenciana PROMETEO / 2009/058American Institute of PhysicsIngeniería ElectrónicaMinisterio de Economía y Competitividad (MINECO). EspañaGeneralitat Valenciana2011info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/126834https://doi.org/10.1063/1.3622615reponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésJournal of Applied Physics, 110 (4), 043705-1-043705-6.HOPE CSD2007-00007PROMETEO / 2009/058https://doi.org/10.1063/1.3622615info:eu-repo/semantics/openAccessoai:idus.us.es:11441/1268342026-06-17T12:51:07Z
dc.title.none.fl_str_mv Interpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of traps
title Interpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of traps
spellingShingle Interpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of traps
Hinojo Montero, José María
Frequency domain analysis
Band gaps
Electronic device
Carrier mobility
title_short Interpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of traps
title_full Interpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of traps
title_fullStr Interpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of traps
title_full_unstemmed Interpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of traps
title_sort Interpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of traps
dc.creator.none.fl_str_mv Hinojo Montero, José María
Bisquert, Juan
author Hinojo Montero, José María
author_facet Hinojo Montero, José María
Bisquert, Juan
author_role author
author2 Bisquert, Juan
author2_role author
dc.contributor.none.fl_str_mv Ingeniería Electrónica
Ministerio de Economía y Competitividad (MINECO). España
Generalitat Valenciana
dc.subject.none.fl_str_mv Frequency domain analysis
Band gaps
Electronic device
Carrier mobility
topic Frequency domain analysis
Band gaps
Electronic device
Carrier mobility
description Charge carrier transport in disordered organic semiconductors, performed in electronic devices such as optoelectronic and photovoltaic ones, is usually affected by an exponential distribution of localized states in the band-gap (traps) under space-charge limited current. In this paper, we provide a full analysis for the trap-controlled transport of the single-carrier device in the frequency domain. Trap-limited mobility is interpreted in terms of the classical multiple-trapping picture with one transport state and the trapping-detrapping dynamics of the exponential density of traps. This allows us to provide a suitable explanation of the usual experimental features of the mobility dependence on voltage as along with the capacitance spectra.
publishDate 2011
dc.date.none.fl_str_mv 2011
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/11441/126834
https://doi.org/10.1063/1.3622615
url https://hdl.handle.net/11441/126834
https://doi.org/10.1063/1.3622615
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Journal of Applied Physics, 110 (4), 043705-1-043705-6.
HOPE CSD2007-00007
PROMETEO / 2009/058
https://doi.org/10.1063/1.3622615
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:idUS. Depósito de Investigación de la Universidad de Sevilla
instname:Universidad de Sevilla (US)
instname_str Universidad de Sevilla (US)
reponame_str idUS. Depósito de Investigación de la Universidad de Sevilla
collection idUS. Depósito de Investigación de la Universidad de Sevilla
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869425393778294784
score 15,301603

Registos relacionados