Interpretation of trap-limited mobility in space-charge limited current in organic layers with exponential density of traps
Charge carrier transport in disordered organic semiconductors, performed in electronic devices such as optoelectronic and photovoltaic ones, is usually affected by an exponential distribution of localized states in the band-gap (traps) under space-charge limited current. In this paper, we provide a...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2011 |
| País: | España |
| Institución: | Universidad de Sevilla (US) |
| Repositorio: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:idus.us.es:11441/126834 |
| Acceso en línea: | https://hdl.handle.net/11441/126834 https://doi.org/10.1063/1.3622615 |
| Access Level: | acceso abierto |
| Palabra clave: | Frequency domain analysis Band gaps Electronic device Carrier mobility |
| Sumario: | Charge carrier transport in disordered organic semiconductors, performed in electronic devices such as optoelectronic and photovoltaic ones, is usually affected by an exponential distribution of localized states in the band-gap (traps) under space-charge limited current. In this paper, we provide a full analysis for the trap-controlled transport of the single-carrier device in the frequency domain. Trap-limited mobility is interpreted in terms of the classical multiple-trapping picture with one transport state and the trapping-detrapping dynamics of the exponential density of traps. This allows us to provide a suitable explanation of the usual experimental features of the mobility dependence on voltage as along with the capacitance spectra. |
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