Supplemental Material: Doubling the mobility of InAs/InGaAs selective area grown nanowires

20 pages. -- PDF file includes S1. Substrate fabrication and growth details; S2. Degradation of surface topography after thermal oxide removal prior nanowire growth; S3. Faceting of GaAs(Sb) vs GaAs nanowires; S4. The role of InGaAs growth temperature; S5. The role of InAs growth temperature; S6. In...

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Autores: Beznasyuk, Daria V., Martí-Sànchez, Sara, Kang, Jung-Hyun, Tanta, Rawa, Rajpalke, Mohana, Stankevič, Tomaš, Wulff, Anna Christensen, Spadaro, Maria Chiara, Bergamaschini, Roberto, Maka, Nikhil N., Petersen, Christian Emanuel N., Carrad, Damon J., Jespersen, Thomas Sand, Arbiol, Jordi, Krogstrup, Peter
Tipo de recurso: conjunto de datos
Fecha de publicación:2022
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/329972
Acceso en línea:http://hdl.handle.net/10261/329972
Access Level:acceso abierto
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spelling Supplemental Material: Doubling the mobility of InAs/InGaAs selective area grown nanowiresBeznasyuk, Daria V.Martí-Sànchez, SaraKang, Jung-HyunTanta, RawaRajpalke, MohanaStankevič, TomašWulff, Anna ChristensenSpadaro, Maria ChiaraBergamaschini, RobertoMaka, Nikhil N.Petersen, Christian Emanuel N.Carrad, Damon J.Jespersen, Thomas SandArbiol, JordiKrogstrup, Peter20 pages. -- PDF file includes S1. Substrate fabrication and growth details; S2. Degradation of surface topography after thermal oxide removal prior nanowire growth; S3. Faceting of GaAs(Sb) vs GaAs nanowires; S4. The role of InGaAs growth temperature; S5. The role of InAs growth temperature; S6. InAs/InGaAs field effect mobility measurements: influence of the InGaAs buffer growth temperature; S7. InAs/InGaAs band structure simulations; S8. Transport measurements of InGaAs/GaAs(Sb) SAG nanowires without the InAs channel; S9. InAs/InGaAs field effect mobility measurements: influence of the InAs growth temperature, figures and tables.ICN2 is supported by the Severo Ochoa program from Spanish MINECO (Grant No. SEV-2017-0706) and is funded by the CERCA Programme/Generalitat de Catalunya.Peer reviewedAmerican Physical SocietyMinisterio de Ciencia, Innovación y Universidades (España)Agencia Estatal de Investigación (España)Generalitat de CatalunyaConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202320232022info:eu-repo/semantics/datasethttp://purl.org/coar/resource_type/c_ddb1application/pdfhttp://hdl.handle.net/10261/329972reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI//SEV-2017-0706Beznasyuk, Daria V.; Martí-Sànchez, Sara; Kang, Jung-Hyun; Tanta, Rawa; Rajpalke, Mohana; Stankevič, T.; Wulff, Anna Christensen; Spadaro, Maria Chiara; Bergamaschini, Roberto; Maka, Nikhil N.; Petersen, Christian Emanuel N.; Carrad, Damon J.; Jespersen, Thomas Sand; Arbiol, Jordi; Krogstrup, Peter. Doubling the mobility of InAs/InGaAs selective area grown nanowires. http://doi.org/10.1103/PhysRevMaterials.6.034602http://doi.org/10.1103/PhysRevMaterials.6.034602Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3299722026-05-22T06:33:51Z
dc.title.none.fl_str_mv Supplemental Material: Doubling the mobility of InAs/InGaAs selective area grown nanowires
title Supplemental Material: Doubling the mobility of InAs/InGaAs selective area grown nanowires
spellingShingle Supplemental Material: Doubling the mobility of InAs/InGaAs selective area grown nanowires
Beznasyuk, Daria V.
title_short Supplemental Material: Doubling the mobility of InAs/InGaAs selective area grown nanowires
title_full Supplemental Material: Doubling the mobility of InAs/InGaAs selective area grown nanowires
title_fullStr Supplemental Material: Doubling the mobility of InAs/InGaAs selective area grown nanowires
title_full_unstemmed Supplemental Material: Doubling the mobility of InAs/InGaAs selective area grown nanowires
title_sort Supplemental Material: Doubling the mobility of InAs/InGaAs selective area grown nanowires
dc.creator.none.fl_str_mv Beznasyuk, Daria V.
Martí-Sànchez, Sara
Kang, Jung-Hyun
Tanta, Rawa
Rajpalke, Mohana
Stankevič, Tomaš
Wulff, Anna Christensen
Spadaro, Maria Chiara
Bergamaschini, Roberto
Maka, Nikhil N.
Petersen, Christian Emanuel N.
Carrad, Damon J.
Jespersen, Thomas Sand
Arbiol, Jordi
Krogstrup, Peter
author Beznasyuk, Daria V.
author_facet Beznasyuk, Daria V.
Martí-Sànchez, Sara
Kang, Jung-Hyun
Tanta, Rawa
Rajpalke, Mohana
Stankevič, Tomaš
Wulff, Anna Christensen
Spadaro, Maria Chiara
Bergamaschini, Roberto
Maka, Nikhil N.
Petersen, Christian Emanuel N.
Carrad, Damon J.
Jespersen, Thomas Sand
Arbiol, Jordi
Krogstrup, Peter
author_role author
author2 Martí-Sànchez, Sara
Kang, Jung-Hyun
Tanta, Rawa
Rajpalke, Mohana
Stankevič, Tomaš
Wulff, Anna Christensen
Spadaro, Maria Chiara
Bergamaschini, Roberto
Maka, Nikhil N.
Petersen, Christian Emanuel N.
Carrad, Damon J.
Jespersen, Thomas Sand
Arbiol, Jordi
Krogstrup, Peter
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Ministerio de Ciencia, Innovación y Universidades (España)
Agencia Estatal de Investigación (España)
Generalitat de Catalunya
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
description 20 pages. -- PDF file includes S1. Substrate fabrication and growth details; S2. Degradation of surface topography after thermal oxide removal prior nanowire growth; S3. Faceting of GaAs(Sb) vs GaAs nanowires; S4. The role of InGaAs growth temperature; S5. The role of InAs growth temperature; S6. InAs/InGaAs field effect mobility measurements: influence of the InGaAs buffer growth temperature; S7. InAs/InGaAs band structure simulations; S8. Transport measurements of InGaAs/GaAs(Sb) SAG nanowires without the InAs channel; S9. InAs/InGaAs field effect mobility measurements: influence of the InAs growth temperature, figures and tables.
publishDate 2022
dc.date.none.fl_str_mv 2022
2023
2023
dc.type.none.fl_str_mv info:eu-repo/semantics/dataset
http://purl.org/coar/resource_type/c_ddb1
format dataset
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/329972
url http://hdl.handle.net/10261/329972
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/AEI//SEV-2017-0706
Beznasyuk, Daria V.; Martí-Sànchez, Sara; Kang, Jung-Hyun; Tanta, Rawa; Rajpalke, Mohana; Stankevič, T.; Wulff, Anna Christensen; Spadaro, Maria Chiara; Bergamaschini, Roberto; Maka, Nikhil N.; Petersen, Christian Emanuel N.; Carrad, Damon J.; Jespersen, Thomas Sand; Arbiol, Jordi; Krogstrup, Peter. Doubling the mobility of InAs/InGaAs selective area grown nanowires. http://doi.org/10.1103/PhysRevMaterials.6.034602
http://doi.org/10.1103/PhysRevMaterials.6.034602
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.812429

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