A New Approach to the Design of CMOS Inductorless Common-gate Low-noise Amplifiers
This work proposes a new approach to design a simple and effective LNA reaching very competitive results in 1.2V 65-nm standard CMOS technology. The proposed design uses a transconductance enhancement technique to achieve 2.3 dB of noise figure at the 5 GHz band. The paper exposes the advantages of...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2020 |
| País: | España |
| Institución: | Universidad de Zaragoza |
| Repositorio: | Zaguán. Repositorio Digital de la Universidad de Zaragoza |
| OAI Identifier: | oai:zaguan.unizar.es:108320 |
| Acceso en línea: | http://zaguan.unizar.es/record/108320 |
| Access Level: | acceso abierto |
| Sumario: | This work proposes a new approach to design a simple and effective LNA reaching very competitive results in 1.2V 65-nm standard CMOS technology. The proposed design uses a transconductance enhancement technique to achieve 2.3 dB of noise figure at the 5 GHz band. The paper exposes the advantages of a reduced number of devices in the circuit and analyses the topology. Simulations with complete technology models and statistical analysis are presented for more precise results. |
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