Optimization of a carbon evaporator cell for MBE growth
A new design of carbon source using a S-shaped glassy carbon filament for p-doping and carbon deposition is presented. Due to the higher resistivity of the glassy carbon, lower current is needed to produce the same flux as in a source based on pyrolytic graphite filament. The source design is very c...
| Autores: | , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2020 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/234865 |
| Acceso en línea: | http://hdl.handle.net/10261/234865 |
| Access Level: | acceso abierto |
| Palabra clave: | Carbon P-Doping Molecular beam epitaxy Ga droplets |
| Sumario: | A new design of carbon source using a S-shaped glassy carbon filament for p-doping and carbon deposition is presented. Due to the higher resistivity of the glassy carbon, lower current is needed to produce the same flux as in a source based on pyrolytic graphite filament. The source design is very compact and the use of water cooling is not mandatory. The results and simulations of the new design show a higher flux than the previously reported glassy carbon based source while avoiding hot spots that can cause an early filament degradation. Hole mobility vs doping level relation data on p-doped GaAs layers grown by molecular beam epitaxy using this new carbon source are shown. With this new C source GaAs (001) surface morphology flatness is preserved after depositing C, showing a reduced substrate heating radiation essential for operate in III-V solid source molecular beam epitaxy (MBE) systems. |
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