Cathodoluminescence of rare earth implanted AllnN
AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broader than those from GaN, while the peak positions only ch...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2006 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/52124 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/52124 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Doped Gan Luminescence Growth Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| Sumario: | AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broader than those from GaN, while the peak positions only change slightly. The rate of increase of cathodoluminescence intensity with annealing temperature, up to 1300 °C, is analyzed for all four series. For Eu the increase exceeds 10x in both hosts. Although some decomposition is observed for annealing at 1200 degrees C, well above the growth temperature, AlInN is shown to be a surprisingly robust host for rare earth ions. |
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