Inkjet Printed HfO2-Based ReRAMs: First Demonstration and Performance Characterization

In this letter we demonstrate for the first time, the implementation of inkjet-printed high-performance ReRAM devices based on the high-k HfO2 dielectric. Features such as high on/off current ratio and low switching voltages pave the way for low power applications. These characteristics, along with...

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Detalles Bibliográficos
Autores: Vescio, Giovanni|||0000-0002-2418-249X, Crespo Yepes, Albert, Alonso Asensio, David, Claramunt Ruiz, Sergi, Porti Pujal, Marc, Rodríguez Martínez, Rosana, Cornet Calveras, Albert, Cirera Hernandez, Albert, Nafría Maqueda, Montserrat|||0000-0002-9549-2890, Aymerich Humet, Xavier|||0000-0002-5874-6257
Tipo de recurso: artículo
Fecha de publicación:2017
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:dnet:upcommonspor::6d747061c116c524390963fb538d40a2
Acceso en línea:https://hdl.handle.net/2117/461792
https://dx.doi.org/10.1109/LED.2017.2668599
Access Level:acceso abierto
Palabra clave:Inkjet printed technology
Resistive switching
ReRAM
Low power applications
Flexible devices
Cost-competitive technology.
Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
Descripción
Sumario:In this letter we demonstrate for the first time, the implementation of inkjet-printed high-performance ReRAM devices based on the high-k HfO2 dielectric. Features such as high on/off current ratio and low switching voltages pave the way for low power applications. These characteristics, along with the known flexible properties of the inkjet-printed dielectric layer, make this kind of ReRAMs suitable for portable devices that do not require large integration density i.e. low density nonvolatile memories or reconfigurable analog circuits.

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