P-type β-gallium oxide

Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga O . Hole conduction, established by Hall and Seebeck measurements, is consistent wi...

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Bibliographic Details
Authors: Chikoidze, Ekaterine|||0000-0002-6566-4639, Fellous, Adel, Perez-Tomas, Amador|||0000-0002-0551-3142, Sauthier, Guillaume|||0000-0003-3566-3878, Tchelidze, Tamar, Ton-That, C., Huynh, Tung Thanh, Phillips, Matthew, Russell, Stephen A. O., Jennings, M. R., Berini, Bruno, Jomard, François, Dumont, Yves|||0000-0002-0739-428X
Format: article
Publication Date:2017
Country:España
Institution:Universitat Autònoma de Barcelona
Repository:Dipòsit Digital de Documents de la UAB
Language:English
OAI Identifier:oai:ddd.uab.cat:225294
Online Access:https://ddd.uab.cat/record/225294
https://dx.doi.org/urn:doi:10.1016/j.mtphys.2017.10.002
Access Level:Open access
Keyword:Wide band gap semiconductor
Beta-Ga2O3
Electrical properties
Hole conductivity
Thermodynamic calculations
Description
Summary:Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga O . Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1.1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga O (crystal) - O (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of β-Ga O of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices.

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