P-type β-gallium oxide
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga O . Hole conduction, established by Hall and Seebeck measurements, is consistent wi...
| Autores: | , , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:225294 |
| Acceso en línea: | https://ddd.uab.cat/record/225294 https://dx.doi.org/urn:doi:10.1016/j.mtphys.2017.10.002 |
| Access Level: | acceso abierto |
| Palabra clave: | Wide band gap semiconductor Beta-Ga2O3 Electrical properties Hole conductivity Thermodynamic calculations |
| Sumario: | Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga O . Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1.1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga O (crystal) - O (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of β-Ga O of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices. |
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