Improved electrical and thermal properties of silicon oxycarbide/spodumene composites
[EN] Novel bulk SiOC/spodumene composites have been developed by spark plasma sintering (SPS) at relatively low temperature (1200–1400 °C). Spodumene is a cheap and natural available lithium aluminosilicate mineral which acts as meltable/active filler. At 1300–1400 °C, the Al migrates toward the gla...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2023 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/349771 |
| Acceso en línea: | http://hdl.handle.net/10261/349771 |
| Access Level: | acceso abierto |
| Palabra clave: | Silicon oxycabide glasses Lithium aluminum silicates Spodumene Thermal conductivity Electrical conductivity Spark plasma sintering |
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Improved electrical and thermal properties of silicon oxycarbide/spodumene compositesMazo Fernández, María AlejandraCaballero Cuesta, AmadorRubio Alonso, JuanSilicon oxycabide glassesLithium aluminum silicatesSpodumeneThermal conductivityElectrical conductivitySpark plasma sintering[EN] Novel bulk SiOC/spodumene composites have been developed by spark plasma sintering (SPS) at relatively low temperature (1200–1400 °C). Spodumene is a cheap and natural available lithium aluminosilicate mineral which acts as meltable/active filler. At 1300–1400 °C, the Al migrates toward the glassy matrix producing a Si-Al-O network and the crystallization of α-cristobalite. The Cfree phase also experiences a deep transformation. The epitaxial growth of few-layered graphene over SiC particles occurs at 1400 °C. An increase in the phonon transport is observed (36%, 1.28 – 2.14 Wm−1K−1) associated to the reduction of the interface resistance between the partially crystallized SiO2 matrix and the SiC nano-wires/graphene-like carbon conductive phase. The electrical conductivity increases (1.14 ×10−2 – 8.1 Sm−1) due to the densification reached and an increasing ordering degree of the tortuous Cfree phase with a high quality of interconnection and crystallization. Raman parameters are determinant to understand the thermal and electrical response.This work was supported by project MAT2016–78700-R financed by the Spanish Research Agency and the European Regional Development Fund (AEI/FEDER, EU) and project ENE2012–39385-CO3–01 funded by Ministry of Economy, Industry and Competitiveness of Spain. We acknowledge support of the publication fee by the Spanish National Research Council (CSIC) Open Access Publication Support Initiative through its Unit of Information Resources for Research (URICI).Peer reviewedElsevier BVAgencia Estatal de Investigación (España)Ministerio de Economía y Competitividad (España)Consejo Superior de Investigaciones Científicas (España)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202420242023info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/349771reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI//MAT2016–78700-Rinfo:eu-repo/grantAgreement/MINECO//ENE2012-39385-C03-01https://doi.org/10.1016/j.jeurceramsoc.2023.04.028Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3497712026-05-22T06:33:51Z |
| dc.title.none.fl_str_mv |
Improved electrical and thermal properties of silicon oxycarbide/spodumene composites |
| title |
Improved electrical and thermal properties of silicon oxycarbide/spodumene composites |
| spellingShingle |
Improved electrical and thermal properties of silicon oxycarbide/spodumene composites Mazo Fernández, María Alejandra Silicon oxycabide glasses Lithium aluminum silicates Spodumene Thermal conductivity Electrical conductivity Spark plasma sintering |
| title_short |
Improved electrical and thermal properties of silicon oxycarbide/spodumene composites |
| title_full |
Improved electrical and thermal properties of silicon oxycarbide/spodumene composites |
| title_fullStr |
Improved electrical and thermal properties of silicon oxycarbide/spodumene composites |
| title_full_unstemmed |
Improved electrical and thermal properties of silicon oxycarbide/spodumene composites |
| title_sort |
Improved electrical and thermal properties of silicon oxycarbide/spodumene composites |
| dc.creator.none.fl_str_mv |
Mazo Fernández, María Alejandra Caballero Cuesta, Amador Rubio Alonso, Juan |
| author |
Mazo Fernández, María Alejandra |
| author_facet |
Mazo Fernández, María Alejandra Caballero Cuesta, Amador Rubio Alonso, Juan |
| author_role |
author |
| author2 |
Caballero Cuesta, Amador Rubio Alonso, Juan |
| author2_role |
author author |
| dc.contributor.none.fl_str_mv |
Agencia Estatal de Investigación (España) Ministerio de Economía y Competitividad (España) Consejo Superior de Investigaciones Científicas (España) Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72] |
| dc.subject.none.fl_str_mv |
Silicon oxycabide glasses Lithium aluminum silicates Spodumene Thermal conductivity Electrical conductivity Spark plasma sintering |
| topic |
Silicon oxycabide glasses Lithium aluminum silicates Spodumene Thermal conductivity Electrical conductivity Spark plasma sintering |
| description |
[EN] Novel bulk SiOC/spodumene composites have been developed by spark plasma sintering (SPS) at relatively low temperature (1200–1400 °C). Spodumene is a cheap and natural available lithium aluminosilicate mineral which acts as meltable/active filler. At 1300–1400 °C, the Al migrates toward the glassy matrix producing a Si-Al-O network and the crystallization of α-cristobalite. The Cfree phase also experiences a deep transformation. The epitaxial growth of few-layered graphene over SiC particles occurs at 1400 °C. An increase in the phonon transport is observed (36%, 1.28 – 2.14 Wm−1K−1) associated to the reduction of the interface resistance between the partially crystallized SiO2 matrix and the SiC nano-wires/graphene-like carbon conductive phase. The electrical conductivity increases (1.14 ×10−2 – 8.1 Sm−1) due to the densification reached and an increasing ordering degree of the tortuous Cfree phase with a high quality of interconnection and crystallization. Raman parameters are determinant to understand the thermal and electrical response. |
| publishDate |
2023 |
| dc.date.none.fl_str_mv |
2023 2024 2024 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article http://purl.org/coar/resource_type/c_6501 Publisher's version info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10261/349771 |
| url |
http://hdl.handle.net/10261/349771 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
#PLACEHOLDER_PARENT_METADATA_VALUE# #PLACEHOLDER_PARENT_METADATA_VALUE# info:eu-repo/grantAgreement/AEI//MAT2016–78700-R info:eu-repo/grantAgreement/MINECO//ENE2012-39385-C03-01 https://doi.org/10.1016/j.jeurceramsoc.2023.04.028 Sí |
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info:eu-repo/semantics/openAccess |
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openAccess |
| dc.publisher.none.fl_str_mv |
Elsevier BV |
| publisher.none.fl_str_mv |
Elsevier BV |
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reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC instname:Consejo Superior de Investigaciones Científicas (CSIC) |
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Consejo Superior de Investigaciones Científicas (CSIC) |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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1869424636811280384 |
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15,81155 |