Improved electrical and thermal properties of silicon oxycarbide/spodumene composites

[EN] Novel bulk SiOC/spodumene composites have been developed by spark plasma sintering (SPS) at relatively low temperature (1200–1400 °C). Spodumene is a cheap and natural available lithium aluminosilicate mineral which acts as meltable/active filler. At 1300–1400 °C, the Al migrates toward the gla...

Descripción completa

Detalles Bibliográficos
Autores: Mazo Fernández, María Alejandra, Caballero Cuesta, Amador, Rubio Alonso, Juan
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2023
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/349771
Acceso en línea:http://hdl.handle.net/10261/349771
Access Level:acceso abierto
Palabra clave:Silicon oxycabide glasses
Lithium aluminum silicates
Spodumene
Thermal conductivity
Electrical conductivity
Spark plasma sintering
id ES_f5a9f6aebd5ff0d2a155c664b665d00a
oai_identifier_str oai:digital.csic.es:10261/349771
network_acronym_str ES
network_name_str España
repository_id_str
spelling Improved electrical and thermal properties of silicon oxycarbide/spodumene compositesMazo Fernández, María AlejandraCaballero Cuesta, AmadorRubio Alonso, JuanSilicon oxycabide glassesLithium aluminum silicatesSpodumeneThermal conductivityElectrical conductivitySpark plasma sintering[EN] Novel bulk SiOC/spodumene composites have been developed by spark plasma sintering (SPS) at relatively low temperature (1200–1400 °C). Spodumene is a cheap and natural available lithium aluminosilicate mineral which acts as meltable/active filler. At 1300–1400 °C, the Al migrates toward the glassy matrix producing a Si-Al-O network and the crystallization of α-cristobalite. The Cfree phase also experiences a deep transformation. The epitaxial growth of few-layered graphene over SiC particles occurs at 1400 °C. An increase in the phonon transport is observed (36%, 1.28 – 2.14 Wm−1K−1) associated to the reduction of the interface resistance between the partially crystallized SiO2 matrix and the SiC nano-wires/graphene-like carbon conductive phase. The electrical conductivity increases (1.14 ×10−2 – 8.1 Sm−1) due to the densification reached and an increasing ordering degree of the tortuous Cfree phase with a high quality of interconnection and crystallization. Raman parameters are determinant to understand the thermal and electrical response.This work was supported by project MAT2016–78700-R financed by the Spanish Research Agency and the European Regional Development Fund (AEI/FEDER, EU) and project ENE2012–39385-CO3–01 funded by Ministry of Economy, Industry and Competitiveness of Spain. We acknowledge support of the publication fee by the Spanish National Research Council (CSIC) Open Access Publication Support Initiative through its Unit of Information Resources for Research (URICI).Peer reviewedElsevier BVAgencia Estatal de Investigación (España)Ministerio de Economía y Competitividad (España)Consejo Superior de Investigaciones Científicas (España)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202420242023info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/349771reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI//MAT2016–78700-Rinfo:eu-repo/grantAgreement/MINECO//ENE2012-39385-C03-01https://doi.org/10.1016/j.jeurceramsoc.2023.04.028Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3497712026-05-22T06:33:51Z
dc.title.none.fl_str_mv Improved electrical and thermal properties of silicon oxycarbide/spodumene composites
title Improved electrical and thermal properties of silicon oxycarbide/spodumene composites
spellingShingle Improved electrical and thermal properties of silicon oxycarbide/spodumene composites
Mazo Fernández, María Alejandra
Silicon oxycabide glasses
Lithium aluminum silicates
Spodumene
Thermal conductivity
Electrical conductivity
Spark plasma sintering
title_short Improved electrical and thermal properties of silicon oxycarbide/spodumene composites
title_full Improved electrical and thermal properties of silicon oxycarbide/spodumene composites
title_fullStr Improved electrical and thermal properties of silicon oxycarbide/spodumene composites
title_full_unstemmed Improved electrical and thermal properties of silicon oxycarbide/spodumene composites
title_sort Improved electrical and thermal properties of silicon oxycarbide/spodumene composites
dc.creator.none.fl_str_mv Mazo Fernández, María Alejandra
Caballero Cuesta, Amador
Rubio Alonso, Juan
author Mazo Fernández, María Alejandra
author_facet Mazo Fernández, María Alejandra
Caballero Cuesta, Amador
Rubio Alonso, Juan
author_role author
author2 Caballero Cuesta, Amador
Rubio Alonso, Juan
author2_role author
author
dc.contributor.none.fl_str_mv Agencia Estatal de Investigación (España)
Ministerio de Economía y Competitividad (España)
Consejo Superior de Investigaciones Científicas (España)
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Silicon oxycabide glasses
Lithium aluminum silicates
Spodumene
Thermal conductivity
Electrical conductivity
Spark plasma sintering
topic Silicon oxycabide glasses
Lithium aluminum silicates
Spodumene
Thermal conductivity
Electrical conductivity
Spark plasma sintering
description [EN] Novel bulk SiOC/spodumene composites have been developed by spark plasma sintering (SPS) at relatively low temperature (1200–1400 °C). Spodumene is a cheap and natural available lithium aluminosilicate mineral which acts as meltable/active filler. At 1300–1400 °C, the Al migrates toward the glassy matrix producing a Si-Al-O network and the crystallization of α-cristobalite. The Cfree phase also experiences a deep transformation. The epitaxial growth of few-layered graphene over SiC particles occurs at 1400 °C. An increase in the phonon transport is observed (36%, 1.28 – 2.14 Wm−1K−1) associated to the reduction of the interface resistance between the partially crystallized SiO2 matrix and the SiC nano-wires/graphene-like carbon conductive phase. The electrical conductivity increases (1.14 ×10−2 – 8.1 Sm−1) due to the densification reached and an increasing ordering degree of the tortuous Cfree phase with a high quality of interconnection and crystallization. Raman parameters are determinant to understand the thermal and electrical response.
publishDate 2023
dc.date.none.fl_str_mv 2023
2024
2024
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/349771
url http://hdl.handle.net/10261/349771
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/AEI//MAT2016–78700-R
info:eu-repo/grantAgreement/MINECO//ENE2012-39385-C03-01
https://doi.org/10.1016/j.jeurceramsoc.2023.04.028

dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Elsevier BV
publisher.none.fl_str_mv Elsevier BV
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869424636811280384
score 15,81155