Improved electrical and thermal properties of silicon oxycarbide/spodumene composites
[EN] Novel bulk SiOC/spodumene composites have been developed by spark plasma sintering (SPS) at relatively low temperature (1200–1400 °C). Spodumene is a cheap and natural available lithium aluminosilicate mineral which acts as meltable/active filler. At 1300–1400 °C, the Al migrates toward the gla...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2023 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/349771 |
| Acceso en línea: | http://hdl.handle.net/10261/349771 |
| Access Level: | acceso abierto |
| Palabra clave: | Silicon oxycabide glasses Lithium aluminum silicates Spodumene Thermal conductivity Electrical conductivity Spark plasma sintering |
| Sumario: | [EN] Novel bulk SiOC/spodumene composites have been developed by spark plasma sintering (SPS) at relatively low temperature (1200–1400 °C). Spodumene is a cheap and natural available lithium aluminosilicate mineral which acts as meltable/active filler. At 1300–1400 °C, the Al migrates toward the glassy matrix producing a Si-Al-O network and the crystallization of α-cristobalite. The Cfree phase also experiences a deep transformation. The epitaxial growth of few-layered graphene over SiC particles occurs at 1400 °C. An increase in the phonon transport is observed (36%, 1.28 – 2.14 Wm−1K−1) associated to the reduction of the interface resistance between the partially crystallized SiO2 matrix and the SiC nano-wires/graphene-like carbon conductive phase. The electrical conductivity increases (1.14 ×10−2 – 8.1 Sm−1) due to the densification reached and an increasing ordering degree of the tortuous Cfree phase with a high quality of interconnection and crystallization. Raman parameters are determinant to understand the thermal and electrical response. |
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