SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes

This paper reports the use of the Quasi-static Memdiode Model (QMM) for simulating Complementary Resistive Switching (CRS) devices. CRS arises from the anti-serial connection of two memristors and it is used for generating low and high-resistance regions in the I-V characteristic with the aim of mit...

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Autores: Saludes Tapia, Maria Mercedes|||0000-0002-7091-4866, Bargallo Gonzalez, Mireia|||0000-0001-6792-4556, Campabadal, Francesca|||0000-0001-7758-4567, Suñé, Jordi|||0000-0003-0108-4907, Miranda, E.|||0000-0003-0470-5318
Tipo de recurso: artículo
Fecha de publicación:2022
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:265734
Acceso en línea:https://ddd.uab.cat/record/265734
https://dx.doi.org/urn:doi:10.1016/j.sse.2022.108312
Access Level:acceso abierto
Palabra clave:Resistive switching
Complementary resistive switching
Memristor
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spelling SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodesSaludes Tapia, Maria Mercedes|||0000-0002-7091-4866Bargallo Gonzalez, Mireia|||0000-0001-6792-4556Campabadal, Francesca|||0000-0001-7758-4567Suñé, Jordi|||0000-0003-0108-4907Miranda, E.|||0000-0003-0470-5318Resistive switchingComplementary resistive switchingMemristorThis paper reports the use of the Quasi-static Memdiode Model (QMM) for simulating Complementary Resistive Switching (CRS) devices. CRS arises from the anti-serial connection of two memristors and it is used for generating low and high-resistance regions in the I-V characteristic with the aim of mitigating the sneak-path conduction problem in crossbar arrays. Here, the use of the QMM for CRS in the form of a six terminal subcircuit is explored. While two terminals of the subcircuit correspond to the conventional input and output pins of the CRS structure, the rest provide information about the voltage at the central node, the low-voltage conductance of each device, and the low-voltage conductance of the whole structure. Special attention is paid to the simulation of the so-called table with legs hysteresis loop (resistance at fixed bias vs. write voltage), which is often invoked in connection with devices that exhibit switching activity at the two interfaces of a single dielectric layer. Because of the internal potential drop distribution, the switching process takes place alternately at one side of the structure or the other giving rise to a pseudo-CRS behavior. The flexibility of the proposed approach is demonstrated through a series of fitting exercises that involve experimental data reported in the literature. The model script for the SPICE simulator is also provided. 22022-01-0120222022-01-01Articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/265734https://dx.doi.org/urn:doi:10.1016/j.sse.2022.108312reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengAgencia Estatal de Investigación https://doi.org/10.13039/501100011033 TEC2017-84321-C4-1-RAgencia Estatal de Investigación https://doi.org/10.13039/501100011033 TEC2017-84321-C4-4-Ropen accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.https://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2657342026-06-06T12:50:31Z
dc.title.none.fl_str_mv SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes
title SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes
spellingShingle SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes
Saludes Tapia, Maria Mercedes|||0000-0002-7091-4866
Resistive switching
Complementary resistive switching
Memristor
title_short SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes
title_full SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes
title_fullStr SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes
title_full_unstemmed SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes
title_sort SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes
dc.creator.none.fl_str_mv Saludes Tapia, Maria Mercedes|||0000-0002-7091-4866
Bargallo Gonzalez, Mireia|||0000-0001-6792-4556
Campabadal, Francesca|||0000-0001-7758-4567
Suñé, Jordi|||0000-0003-0108-4907
Miranda, E.|||0000-0003-0470-5318
author Saludes Tapia, Maria Mercedes|||0000-0002-7091-4866
author_facet Saludes Tapia, Maria Mercedes|||0000-0002-7091-4866
Bargallo Gonzalez, Mireia|||0000-0001-6792-4556
Campabadal, Francesca|||0000-0001-7758-4567
Suñé, Jordi|||0000-0003-0108-4907
Miranda, E.|||0000-0003-0470-5318
author_role author
author2 Bargallo Gonzalez, Mireia|||0000-0001-6792-4556
Campabadal, Francesca|||0000-0001-7758-4567
Suñé, Jordi|||0000-0003-0108-4907
Miranda, E.|||0000-0003-0470-5318
author2_role author
author
author
author
dc.subject.none.fl_str_mv Resistive switching
Complementary resistive switching
Memristor
topic Resistive switching
Complementary resistive switching
Memristor
description This paper reports the use of the Quasi-static Memdiode Model (QMM) for simulating Complementary Resistive Switching (CRS) devices. CRS arises from the anti-serial connection of two memristors and it is used for generating low and high-resistance regions in the I-V characteristic with the aim of mitigating the sneak-path conduction problem in crossbar arrays. Here, the use of the QMM for CRS in the form of a six terminal subcircuit is explored. While two terminals of the subcircuit correspond to the conventional input and output pins of the CRS structure, the rest provide information about the voltage at the central node, the low-voltage conductance of each device, and the low-voltage conductance of the whole structure. Special attention is paid to the simulation of the so-called table with legs hysteresis loop (resistance at fixed bias vs. write voltage), which is often invoked in connection with devices that exhibit switching activity at the two interfaces of a single dielectric layer. Because of the internal potential drop distribution, the switching process takes place alternately at one side of the structure or the other giving rise to a pseudo-CRS behavior. The flexibility of the proposed approach is demonstrated through a series of fitting exercises that involve experimental data reported in the literature. The model script for the SPICE simulator is also provided.
publishDate 2022
dc.date.none.fl_str_mv 2
2022-01-01
2022
2022-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/265734
https://dx.doi.org/urn:doi:10.1016/j.sse.2022.108312
url https://ddd.uab.cat/record/265734
https://dx.doi.org/urn:doi:10.1016/j.sse.2022.108312
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 TEC2017-84321-C4-1-R
Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 TEC2017-84321-C4-4-R
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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