Field effect transistors based on α-MoO3 exfoliated crystals: fabrication, functionalization and characterization
α-MoO3 field effect transistors (FETs), exhibiting n-type behavior, are fabricated. These devices are based on α-MoO3 exfoliated crystals, which are produced from bulk crystals by mechanical exfoliation and then transferred onto Si/SiO2 substrates, through a two-step clean transfer process. The FET...
| Autores: | , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/132523 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/132523 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 621.382 620.3 Anticlockwise hysteresis Field effect transistors Molybdenum oxide Thermal annealing Two-dimensional materials Física de materiales 2211 Física del Estado Sólido 3307.14 Dispositivos Semiconductores |
| Sumario: | α-MoO3 field effect transistors (FETs), exhibiting n-type behavior, are fabricated. These devices are based on α-MoO3 exfoliated crystals, which are produced from bulk crystals by mechanical exfoliation and then transferred onto Si/SiO2 substrates, through a two-step clean transfer process. The FET devices are then achieved by depositing three electrical contacts in a bottom-gate geometry, using photolithography, metal sputtering deposition, and lift-off. Thermal treatments in different atmospheres (vacuum and air) are performed to tune the electrical properties of the channel material by controlling the oxygen vacancy concentration. Preliminary electrical characterization of a modified device reveals a modulation of channel resistance with the gate bias, in agreement with the characteristic n-type behavior of α-MoO3. Notably, it exhibits a promising electron mobility value of ≈0.117 cm2 V−1 s−1, which is comparable to values reported for n-type FETs based on a single/few atomic layers of α-MoO3 and MoS2. Additionally, the transfer curves exhibit anticlockwise hysteresis effects, likely attributed to the adsorption/desorption processes of oxygen molecules on the channel surface, promoted by the applied gate voltage. |
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