Induced p-type semiconductivity in yttria-stabilized zirconia

8 mol% yttria-stabilized zirconia (8YSZ) ceramic is an oxide ion conductor at atmospheric pressure but shows the onset of p-type semiconduction, in addition to the preexisting oxide ion conduction, on application of a dc bias in the range 4-66 Vcm-1 and at temperatures in the range 150°C-750°C. The...

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Detalles Bibliográficos
Autores: Vendrell Villafruela, Xavier|||0000-0003-4705-8253, West, Anthony R.
Tipo de recurso: artículo
Fecha de publicación:2019
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/168330
Acceso en línea:https://hdl.handle.net/2117/168330
https://dx.doi.org/10.1111/jace.16492
Access Level:acceso abierto
Palabra clave:Zirconium oxide
Zirconi -- Tractament tèrmic
Àrees temàtiques de la UPC::Enginyeria química
id ES_f0b4683430a4e8624c0aa7f063211bc7
oai_identifier_str oai:upcommons.upc.edu:2117/168330
network_acronym_str ES
network_name_str España
repository_id_str
spelling Induced p-type semiconductivity in yttria-stabilized zirconiaVendrell Villafruela, Xavier|||0000-0003-4705-8253West, Anthony R.Zirconium oxideZirconi -- Tractament tèrmicÀrees temàtiques de la UPC::Enginyeria química8 mol% yttria-stabilized zirconia (8YSZ) ceramic is an oxide ion conductor at atmospheric pressure but shows the onset of p-type semiconduction, in addition to the preexisting oxide ion conduction, on application of a dc bias in the range 4-66 Vcm-1 and at temperatures in the range 150°C-750°C. The p-type behavior is attributed to the location and hopping of holes on oxygen. This contrasts with the commonly observed introduction of n-type conduction under reducing conditions and high fields. The hole conductivity increases with both dc bias and pO2. Its occurrence may contribute to the early stages of flash phenomena in 8YSZ ceramics.Peer Reviewed20192019-01-0120192019-09-18journal articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/2117/168330https://dx.doi.org/10.1111/jace.16492reponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Attribution-NonCommercial-NoDerivs 3.0 Spainhttp://creativecommons.org/licenses/by-nc-nd/3.0/es/info:eu-repo/semantics/openAccessoai:upcommons.upc.edu:2117/1683302026-05-27T15:37:01Z
dc.title.none.fl_str_mv Induced p-type semiconductivity in yttria-stabilized zirconia
title Induced p-type semiconductivity in yttria-stabilized zirconia
spellingShingle Induced p-type semiconductivity in yttria-stabilized zirconia
Vendrell Villafruela, Xavier|||0000-0003-4705-8253
Zirconium oxide
Zirconi -- Tractament tèrmic
Àrees temàtiques de la UPC::Enginyeria química
title_short Induced p-type semiconductivity in yttria-stabilized zirconia
title_full Induced p-type semiconductivity in yttria-stabilized zirconia
title_fullStr Induced p-type semiconductivity in yttria-stabilized zirconia
title_full_unstemmed Induced p-type semiconductivity in yttria-stabilized zirconia
title_sort Induced p-type semiconductivity in yttria-stabilized zirconia
dc.creator.none.fl_str_mv Vendrell Villafruela, Xavier|||0000-0003-4705-8253
West, Anthony R.
author Vendrell Villafruela, Xavier|||0000-0003-4705-8253
author_facet Vendrell Villafruela, Xavier|||0000-0003-4705-8253
West, Anthony R.
author_role author
author2 West, Anthony R.
author2_role author
dc.subject.none.fl_str_mv Zirconium oxide
Zirconi -- Tractament tèrmic
Àrees temàtiques de la UPC::Enginyeria química
topic Zirconium oxide
Zirconi -- Tractament tèrmic
Àrees temàtiques de la UPC::Enginyeria química
description 8 mol% yttria-stabilized zirconia (8YSZ) ceramic is an oxide ion conductor at atmospheric pressure but shows the onset of p-type semiconduction, in addition to the preexisting oxide ion conduction, on application of a dc bias in the range 4-66 Vcm-1 and at temperatures in the range 150°C-750°C. The p-type behavior is attributed to the location and hopping of holes on oxygen. This contrasts with the commonly observed introduction of n-type conduction under reducing conditions and high fields. The hole conductivity increases with both dc bias and pO2. Its occurrence may contribute to the early stages of flash phenomena in 8YSZ ceramics.
publishDate 2019
dc.date.none.fl_str_mv 2019
2019-01-01
2019
2019-09-18
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/2117/168330
https://dx.doi.org/10.1111/jace.16492
url https://hdl.handle.net/2117/168330
https://dx.doi.org/10.1111/jace.16492
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution-NonCommercial-NoDerivs 3.0 Spain
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution-NonCommercial-NoDerivs 3.0 Spain
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:UPCommons. Portal del coneixement obert de la UPC
instname:Universitat Politècnica de Catalunya (UPC)
instname_str Universitat Politècnica de Catalunya (UPC)
reponame_str UPCommons. Portal del coneixement obert de la UPC
collection UPCommons. Portal del coneixement obert de la UPC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869424007171801088
score 15,301629