Induced p-type semiconductivity in yttria-stabilized zirconia
8 mol% yttria-stabilized zirconia (8YSZ) ceramic is an oxide ion conductor at atmospheric pressure but shows the onset of p-type semiconduction, in addition to the preexisting oxide ion conduction, on application of a dc bias in the range 4-66 Vcm-1 and at temperatures in the range 150°C-750°C. The...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2019 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/168330 |
| Acceso en línea: | https://hdl.handle.net/2117/168330 https://dx.doi.org/10.1111/jace.16492 |
| Access Level: | acceso abierto |
| Palabra clave: | Zirconium oxide Zirconi -- Tractament tèrmic Àrees temàtiques de la UPC::Enginyeria química |
| Sumario: | 8 mol% yttria-stabilized zirconia (8YSZ) ceramic is an oxide ion conductor at atmospheric pressure but shows the onset of p-type semiconduction, in addition to the preexisting oxide ion conduction, on application of a dc bias in the range 4-66 Vcm-1 and at temperatures in the range 150°C-750°C. The p-type behavior is attributed to the location and hopping of holes on oxygen. This contrasts with the commonly observed introduction of n-type conduction under reducing conditions and high fields. The hole conductivity increases with both dc bias and pO2. Its occurrence may contribute to the early stages of flash phenomena in 8YSZ ceramics. |
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