Kinetics and compositional dependence on the microwave power and DiH4/N flow ratio of silicon nitride deposited by electron cyclotron resonance plasmas
The archival version of this work was published in Journal of The Electrochemical Society. Hernández, M. J., Garrido, J., Martínez, J. and J. Piqueras. Kinetics and compositional dependence on the microwave power and DiH4/N flow ratio of silicon nitride deposited by electron cyclotron resonance plas...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1994 |
| País: | España |
| Institución: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/13952 |
| Acceso en línea: | http://hdl.handle.net/10486/13952 https://dx.doi.org/10.1149/1.2059309 |
| Access Level: | acceso abierto |
| Palabra clave: | Física Electrónica |
| Sumario: | The archival version of this work was published in Journal of The Electrochemical Society. Hernández, M. J., Garrido, J., Martínez, J. and J. Piqueras. Kinetics and compositional dependence on the microwave power and DiH4/N flow ratio of silicon nitride deposited by electron cyclotron resonance plasmas. Journal of The Electrochemical Society 141.11 (1994): 3234-3237 |
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