A Laser‐ARPES view of the 2D electron systems at LaAlO_3 /SrTiO_3 and Al/SrTiO_3 interfaces
The electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO_3 (Al/STO) and LaAlO_3/SrTiO_3 (LAO/STO) interfaces is measured by means of laser angle resolved photoemission spectroscopy, taking advantage of the large photoelectron escape depth at low photon energy to p...
| Authors: | , , , , , |
|---|---|
| Format: | article |
| Publication Date: | 2022 |
| Country: | España |
| Institution: | Universidad Complutense de Madrid (UCM) |
| Repository: | Docta Complutense |
| Language: | English |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/71534 |
| Online Access: | https://hdl.handle.net/20.500.14352/71534 |
| Access Level: | Open access |
| Keyword: | 538.9 2DEG Al/SrTiO_3 ARPES Electronic structure LaAlO_3/SrTiO_3 SrTiO_3 Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
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A Laser‐ARPES view of the 2D electron systems at LaAlO_3 /SrTiO_3 and Al/SrTiO_3 interfacesMcKeown Walker, SiobhanBoselli, MargheritaMartínez, Emanuel AlbertoGariglio, StefanoBruno, Flavio YairBaumberger, Felix538.92DEGAl/SrTiO_3ARPESElectronic structureLaAlO_3/SrTiO_3SrTiO_3Física de materialesFísica del estado sólido2211 Física del Estado SólidoThe electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO_3 (Al/STO) and LaAlO_3/SrTiO_3 (LAO/STO) interfaces is measured by means of laser angle resolved photoemission spectroscopy, taking advantage of the large photoelectron escape depth at low photon energy to probe these buried interfaces. The possibility of tuning the electronic density in Al/STO by varying the Al layer thickness is demonstrated, and it is shown that the electronic structure evolution is well described by self-consistent tight binding supercell calculations, but differs qualitatively from a rigid band shift model. It is shown that both 2DES are strongly coupled to longitudinal optical phonons, in agreement with previous reports of a polaronic ground state in similar STO based 2DESs. Tuning the electronic density in Al/STO to match that of LAO/STO and comparing both systems, it is estimated that the intrinsic LAO/STO 2DES has a bare band width of approximate to 60 meV and a carrier density of approximate to 6 x 10^13 cm^-2.WileyUniversidad Complutense de Madrid20222022-03-1620222022-03-16journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/71534reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Atribución-NoComercial 3.0 Españahttps://creativecommons.org/licenses/by-nc/3.0/es/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/715342026-06-02T12:44:21Z |
| dc.title.none.fl_str_mv |
A Laser‐ARPES view of the 2D electron systems at LaAlO_3 /SrTiO_3 and Al/SrTiO_3 interfaces |
| title |
A Laser‐ARPES view of the 2D electron systems at LaAlO_3 /SrTiO_3 and Al/SrTiO_3 interfaces |
| spellingShingle |
A Laser‐ARPES view of the 2D electron systems at LaAlO_3 /SrTiO_3 and Al/SrTiO_3 interfaces McKeown Walker, Siobhan 538.9 2DEG Al/SrTiO_3 ARPES Electronic structure LaAlO_3/SrTiO_3 SrTiO_3 Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| title_short |
A Laser‐ARPES view of the 2D electron systems at LaAlO_3 /SrTiO_3 and Al/SrTiO_3 interfaces |
| title_full |
A Laser‐ARPES view of the 2D electron systems at LaAlO_3 /SrTiO_3 and Al/SrTiO_3 interfaces |
| title_fullStr |
A Laser‐ARPES view of the 2D electron systems at LaAlO_3 /SrTiO_3 and Al/SrTiO_3 interfaces |
| title_full_unstemmed |
A Laser‐ARPES view of the 2D electron systems at LaAlO_3 /SrTiO_3 and Al/SrTiO_3 interfaces |
| title_sort |
A Laser‐ARPES view of the 2D electron systems at LaAlO_3 /SrTiO_3 and Al/SrTiO_3 interfaces |
| dc.creator.none.fl_str_mv |
McKeown Walker, Siobhan Boselli, Margherita Martínez, Emanuel Alberto Gariglio, Stefano Bruno, Flavio Yair Baumberger, Felix |
| author |
McKeown Walker, Siobhan |
| author_facet |
McKeown Walker, Siobhan Boselli, Margherita Martínez, Emanuel Alberto Gariglio, Stefano Bruno, Flavio Yair Baumberger, Felix |
| author_role |
author |
| author2 |
Boselli, Margherita Martínez, Emanuel Alberto Gariglio, Stefano Bruno, Flavio Yair Baumberger, Felix |
| author2_role |
author author author author author |
| dc.contributor.none.fl_str_mv |
Universidad Complutense de Madrid |
| dc.subject.none.fl_str_mv |
538.9 2DEG Al/SrTiO_3 ARPES Electronic structure LaAlO_3/SrTiO_3 SrTiO_3 Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| topic |
538.9 2DEG Al/SrTiO_3 ARPES Electronic structure LaAlO_3/SrTiO_3 SrTiO_3 Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| description |
The electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO_3 (Al/STO) and LaAlO_3/SrTiO_3 (LAO/STO) interfaces is measured by means of laser angle resolved photoemission spectroscopy, taking advantage of the large photoelectron escape depth at low photon energy to probe these buried interfaces. The possibility of tuning the electronic density in Al/STO by varying the Al layer thickness is demonstrated, and it is shown that the electronic structure evolution is well described by self-consistent tight binding supercell calculations, but differs qualitatively from a rigid band shift model. It is shown that both 2DES are strongly coupled to longitudinal optical phonons, in agreement with previous reports of a polaronic ground state in similar STO based 2DESs. Tuning the electronic density in Al/STO to match that of LAO/STO and comparing both systems, it is estimated that the intrinsic LAO/STO 2DES has a bare band width of approximate to 60 meV and a carrier density of approximate to 6 x 10^13 cm^-2. |
| publishDate |
2022 |
| dc.date.none.fl_str_mv |
2022 2022-03-16 2022 2022-03-16 |
| dc.type.none.fl_str_mv |
journal article http://purl.org/coar/resource_type/c_6501 |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/20.500.14352/71534 |
| url |
https://hdl.handle.net/20.500.14352/71534 |
| dc.language.none.fl_str_mv |
Inglés eng |
| language_invalid_str_mv |
Inglés |
| language |
eng |
| dc.rights.none.fl_str_mv |
open access http://purl.org/coar/access_right/c_abf2 Atribución-NoComercial 3.0 España https://creativecommons.org/licenses/by-nc/3.0/es/ |
| dc.rights.openaire.fl_str_mv |
info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
open access http://purl.org/coar/access_right/c_abf2 Atribución-NoComercial 3.0 España https://creativecommons.org/licenses/by-nc/3.0/es/ |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
application/pdf |
| dc.publisher.none.fl_str_mv |
Wiley |
| publisher.none.fl_str_mv |
Wiley |
| dc.source.none.fl_str_mv |
reponame:Docta Complutense instname:Universidad Complutense de Madrid (UCM) |
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Universidad Complutense de Madrid (UCM) |
| reponame_str |
Docta Complutense |
| collection |
Docta Complutense |
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|
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1869423369413197824 |
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15.198674 |