Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals

The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally...

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Authors: Díaz-Guerra Viejo, Carlos, Vincent, J., Piqueras De Noriega, Francisco Javier, Bermudez, V., Diéguez, E.
Format: article
Publication Date:2005
Country:España
Institution:Universidad Complutense de Madrid (UCM)
Repository:Docta Complutense
Language:English
OAI Identifier:oai:docta.ucm.es:20.500.14352/51132
Online Access:https://hdl.handle.net/20.500.14352/51132
Access Level:Open access
Keyword:538.9
Auger Recombination
Bulk Gasb. Photoluminescence
Defects
Physics
Cells
Gaas Auger Recombination
Gaas
Física de materiales
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spelling Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystalsDíaz-Guerra Viejo, CarlosVincent, J.Piqueras De Noriega, Francisco JavierBermudez, V.Diéguez, E.538.9Auger RecombinationBulk Gasb. PhotoluminescenceDefectsPhysicsCellsGaas Auger RecombinationGaas Auger RecombinationGaasFísica de materialesThe radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally the dominant emission. CL spectra recorded under different excitation conditions suggest that this band can be attributed to a Se-related level-to-band transition. The spatial distribution of the 765 meV emission, as observed in the CL images, indicates an inhomogeneous Se distribution in the material.American Institute of PhysicsUniversidad Complutense de Madrid20052005-01-1520052005-01-15journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/51132reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/511322026-06-02T12:44:21Z
dc.title.none.fl_str_mv Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals
title Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals
spellingShingle Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals
Díaz-Guerra Viejo, Carlos
538.9
Auger Recombination
Bulk Gasb. Photoluminescence
Defects
Physics
Cells
Gaas Auger Recombination
Gaas Auger Recombination
Gaas
Física de materiales
title_short Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals
title_full Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals
title_fullStr Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals
title_full_unstemmed Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals
title_sort Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals
dc.creator.none.fl_str_mv Díaz-Guerra Viejo, Carlos
Vincent, J.
Piqueras De Noriega, Francisco Javier
Bermudez, V.
Diéguez, E.
author Díaz-Guerra Viejo, Carlos
author_facet Díaz-Guerra Viejo, Carlos
Vincent, J.
Piqueras De Noriega, Francisco Javier
Bermudez, V.
Diéguez, E.
author_role author
author2 Vincent, J.
Piqueras De Noriega, Francisco Javier
Bermudez, V.
Diéguez, E.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Auger Recombination
Bulk Gasb. Photoluminescence
Defects
Physics
Cells
Gaas Auger Recombination
Gaas Auger Recombination
Gaas
Física de materiales
topic 538.9
Auger Recombination
Bulk Gasb. Photoluminescence
Defects
Physics
Cells
Gaas Auger Recombination
Gaas Auger Recombination
Gaas
Física de materiales
description The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally the dominant emission. CL spectra recorded under different excitation conditions suggest that this band can be attributed to a Se-related level-to-band transition. The spatial distribution of the 765 meV emission, as observed in the CL images, indicates an inhomogeneous Se distribution in the material.
publishDate 2005
dc.date.none.fl_str_mv 2005
2005-01-15
2005
2005-01-15
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/51132
url https://hdl.handle.net/20.500.14352/51132
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301603