Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals
The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally...
| Authors: | , , , , |
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| Format: | article |
| Publication Date: | 2005 |
| Country: | España |
| Institution: | Universidad Complutense de Madrid (UCM) |
| Repository: | Docta Complutense |
| Language: | English |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/51132 |
| Online Access: | https://hdl.handle.net/20.500.14352/51132 |
| Access Level: | Open access |
| Keyword: | 538.9 Auger Recombination Bulk Gasb. Photoluminescence Defects Physics Cells Gaas Auger Recombination Gaas Física de materiales |
| Summary: | The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally the dominant emission. CL spectra recorded under different excitation conditions suggest that this band can be attributed to a Se-related level-to-band transition. The spatial distribution of the 765 meV emission, as observed in the CL images, indicates an inhomogeneous Se distribution in the material. |
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