Transparent conducting thin films by the co-sputtering of ZnO-ITO targets

Transparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one o...

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Authors: Carreras Seguí, Paz, Antony, Aldrin, Roldán Molinero, Rubén, Nos Aguilà, Oriol, Frigeri, Paolo Antonio, Asensi López, José Miguel, Bertomeu i Balagueró, Joan
Format: article
Status:Versión enviada para evaluación y publicación
Publication Date:2010
Country:España
Institution:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repository:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/47147
Online Access:https://hdl.handle.net/2445/47147
Access Level:Open access
Keyword:Òxids metàl·lics
Semiconductors de gap ample
Pel·lícules fines
Cèl·lules solars
Optoelectrònica
Metallic oxides
Wide gap semiconductors
Thin films
Solar cells
Optoelectronics
id ES_e886df6e92e9ea3f63dde2a2271c0773
oai_identifier_str oai:recercat.cat:2445/47147
network_acronym_str ES
network_name_str España
repository_id_str
spelling Transparent conducting thin films by the co-sputtering of ZnO-ITO targetsCarreras Seguí, PazAntony, AldrinRoldán Molinero, RubénNos Aguilà, OriolFrigeri, Paolo AntonioAsensi López, José MiguelBertomeu i Balagueró, JoanÒxids metàl·licsSemiconductors de gap amplePel·lícules finesCèl·lules solarsOptoelectrònicaMetallic oxidesWide gap semiconductorsThin filmsSolar cellsOptoelectronicsTransparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67 % as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film.Wiley-VCH2013201920102013info:eu-repo/semantics/articleinfo:eu-repo/semantics/submittedVersion4 p.application/pdfapplication/pdfhttps://hdl.handle.net/2445/47147Articles publicats en revistes (Física Aplicada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésVersió preprint del document publicat a: http://dx.doi.org/10.1002/pssc.200982852physica status solidi (c), 2010, vol. 7, num. 3-4, p. 953-956http://dx.doi.org/10.1002/pssc.200982852(c) Wiley-VCH, 2010info:eu-repo/semantics/openAccessoai:recercat.cat:2445/471472026-05-29T05:05:01Z
dc.title.none.fl_str_mv Transparent conducting thin films by the co-sputtering of ZnO-ITO targets
title Transparent conducting thin films by the co-sputtering of ZnO-ITO targets
spellingShingle Transparent conducting thin films by the co-sputtering of ZnO-ITO targets
Carreras Seguí, Paz
Òxids metàl·lics
Semiconductors de gap ample
Pel·lícules fines
Cèl·lules solars
Optoelectrònica
Metallic oxides
Wide gap semiconductors
Thin films
Solar cells
Optoelectronics
title_short Transparent conducting thin films by the co-sputtering of ZnO-ITO targets
title_full Transparent conducting thin films by the co-sputtering of ZnO-ITO targets
title_fullStr Transparent conducting thin films by the co-sputtering of ZnO-ITO targets
title_full_unstemmed Transparent conducting thin films by the co-sputtering of ZnO-ITO targets
title_sort Transparent conducting thin films by the co-sputtering of ZnO-ITO targets
dc.creator.none.fl_str_mv Carreras Seguí, Paz
Antony, Aldrin
Roldán Molinero, Rubén
Nos Aguilà, Oriol
Frigeri, Paolo Antonio
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
author Carreras Seguí, Paz
author_facet Carreras Seguí, Paz
Antony, Aldrin
Roldán Molinero, Rubén
Nos Aguilà, Oriol
Frigeri, Paolo Antonio
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
author_role author
author2 Antony, Aldrin
Roldán Molinero, Rubén
Nos Aguilà, Oriol
Frigeri, Paolo Antonio
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Òxids metàl·lics
Semiconductors de gap ample
Pel·lícules fines
Cèl·lules solars
Optoelectrònica
Metallic oxides
Wide gap semiconductors
Thin films
Solar cells
Optoelectronics
topic Òxids metàl·lics
Semiconductors de gap ample
Pel·lícules fines
Cèl·lules solars
Optoelectrònica
Metallic oxides
Wide gap semiconductors
Thin films
Solar cells
Optoelectronics
description Transparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67 % as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film.
publishDate 2010
dc.date.none.fl_str_mv 2010
2013
2013
2019
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/submittedVersion
format article
status_str submittedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/47147
url https://hdl.handle.net/2445/47147
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió preprint del document publicat a: http://dx.doi.org/10.1002/pssc.200982852
physica status solidi (c), 2010, vol. 7, num. 3-4, p. 953-956
http://dx.doi.org/10.1002/pssc.200982852
dc.rights.none.fl_str_mv (c) Wiley-VCH, 2010
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Wiley-VCH, 2010
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4 p.
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Wiley-VCH
publisher.none.fl_str_mv Wiley-VCH
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869422949984894976
score 15.811543

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