Impact of vacancies on diffusive and pseudodiffusive electronic transport in graphene

We present a survey of the effect of vacancies on quantum transport in graphene, exploring conduction regimes ranging from tunnelling to intrinsic transport phenomena. Vacancies, with density up to 2%, are distributed at random either in a balanced manner between the two sublattices or in a totally...

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Detalles Bibliográficos
Autores: Cresti, Alessandro|||0000-0002-1326-2515, Louvet, Thibaud, Ortmann, Frank|||0000-0002-5884-5749, Dinh, Van Tuan|||0000-0002-9605-2686, Lenarczyk, Pawel, Huhs, Georg, Roche, Stephan|||0000-0003-0323-4665
Tipo de recurso: artículo
Fecha de publicación:2013
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:204942
Acceso en línea:https://ddd.uab.cat/record/204942
https://dx.doi.org/urn:doi:10.3390/cryst3020289
Access Level:acceso abierto
Palabra clave:Graphene
Quantum transport
Vacancies
Descripción
Sumario:We present a survey of the effect of vacancies on quantum transport in graphene, exploring conduction regimes ranging from tunnelling to intrinsic transport phenomena. Vacancies, with density up to 2%, are distributed at random either in a balanced manner between the two sublattices or in a totally unbalanced configuration where only atoms sitting on a given sublattice are randomly removed. Quantum transmission shows a variety of different behaviours, which depend on the specific system geometry and disorder distribution. The investigation of the scaling laws of the most significant quantities allows a deep physical insight and the accurate prediction of their trend over a large energy region around the Dirac point. © 2013 by the authors; licensee MDPI, Basel, Switzerland.