Formation of porous layers on n-GaSb by electrochemical etching

The effect of electrochemical etching of n-type GaSb in aqueous solutions of HCl and HF has been analysed. By anodization in HCl, two different morphologies of porous layers were observed depending on the current density. At low current density (0.5 mA cm_(-2)) a macroporous layer is formed with the...

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Detalles Bibliográficos
Autores: Storgards, J., Méndez Martín, María Bianchi, Piqueras De Noriega, Francisco Javier, Chenot, M., Dimroth, F., Bett, A.V.
Tipo de recurso: artículo
Fecha de publicación:2004
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/50954
Acceso en línea:https://hdl.handle.net/20.500.14352/50954
Access Level:acceso abierto
Palabra clave:538.9
Silicon
Gaas
Cathodoluminescence
Semiconductors
Surface
Inp
Photoluminescence
Initiation
Growth
Pores
Física de materiales
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oai_identifier_str oai:docta.ucm.es:20.500.14352/50954
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repository_id_str
spelling Formation of porous layers on n-GaSb by electrochemical etchingStorgards, J.Méndez Martín, María BianchiPiqueras De Noriega, Francisco JavierChenot, M.Dimroth, F.Bett, A.V.538.9SiliconGaasCathodoluminescenceSemiconductorsSurfaceInpPhotoluminescenceInitiationGrowthPoresFísica de materialesThe effect of electrochemical etching of n-type GaSb in aqueous solutions of HCl and HF has been analysed. By anodization in HCl, two different morphologies of porous layers were observed depending on the current density. At low current density (0.5 mA cm_(-2)) a macroporous layer is formed with the pores following preferential directions, while at high current density (15 mA cm_(-2)) pores of sizes less than 100 nm were observed. Furthermore, a comparison between the luminescence in the porous layer and bulk GaSb is also performed. On the other hand, anodization in HF leads to an electropolishing process and no porosification is obtained.Iop Publishing LtdUniversidad Complutense de Madrid20042004-07-0120042004-07-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/50954reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/509542026-06-02T12:44:21Z
dc.title.none.fl_str_mv Formation of porous layers on n-GaSb by electrochemical etching
title Formation of porous layers on n-GaSb by electrochemical etching
spellingShingle Formation of porous layers on n-GaSb by electrochemical etching
Storgards, J.
538.9
Silicon
Gaas
Cathodoluminescence
Semiconductors
Surface
Inp
Photoluminescence
Initiation
Growth
Pores
Física de materiales
title_short Formation of porous layers on n-GaSb by electrochemical etching
title_full Formation of porous layers on n-GaSb by electrochemical etching
title_fullStr Formation of porous layers on n-GaSb by electrochemical etching
title_full_unstemmed Formation of porous layers on n-GaSb by electrochemical etching
title_sort Formation of porous layers on n-GaSb by electrochemical etching
dc.creator.none.fl_str_mv Storgards, J.
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Chenot, M.
Dimroth, F.
Bett, A.V.
author Storgards, J.
author_facet Storgards, J.
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Chenot, M.
Dimroth, F.
Bett, A.V.
author_role author
author2 Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
Chenot, M.
Dimroth, F.
Bett, A.V.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Silicon
Gaas
Cathodoluminescence
Semiconductors
Surface
Inp
Photoluminescence
Initiation
Growth
Pores
Física de materiales
topic 538.9
Silicon
Gaas
Cathodoluminescence
Semiconductors
Surface
Inp
Photoluminescence
Initiation
Growth
Pores
Física de materiales
description The effect of electrochemical etching of n-type GaSb in aqueous solutions of HCl and HF has been analysed. By anodization in HCl, two different morphologies of porous layers were observed depending on the current density. At low current density (0.5 mA cm_(-2)) a macroporous layer is formed with the pores following preferential directions, while at high current density (15 mA cm_(-2)) pores of sizes less than 100 nm were observed. Furthermore, a comparison between the luminescence in the porous layer and bulk GaSb is also performed. On the other hand, anodization in HF leads to an electropolishing process and no porosification is obtained.
publishDate 2004
dc.date.none.fl_str_mv 2004
2004-07-01
2004
2004-07-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/50954
url https://hdl.handle.net/20.500.14352/50954
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Iop Publishing Ltd
publisher.none.fl_str_mv Iop Publishing Ltd
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869422657336770560
score 15.300719

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