XPS Characterization of Transparent Conductive Oxide based on doped ZnO films
This work presents an elemental characterization of vanadium-doped zinc oxide (ZnO:V) thin films, deposited by atomic layer deposition (ALD), for use as transparent conductive oxides (TCO) in transparent photovoltaic cells. This characterization has been carried out by X-ray Photoelectron Spectrosco...
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| Tipo de recurso: | tesis de maestría |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/451871 |
| Acceso en línea: | https://hdl.handle.net/2117/451871 |
| Access Level: | acceso abierto |
| Palabra clave: | Photovoltaic cells Zinc oxide XPS ALD ZnO ZnO:V TCO Cèl·lules fotovoltaiques Òxid de zinc |
| Sumario: | This work presents an elemental characterization of vanadium-doped zinc oxide (ZnO:V) thin films, deposited by atomic layer deposition (ALD), for use as transparent conductive oxides (TCO) in transparent photovoltaic cells. This characterization has been carried out by X-ray Photoelectron Spectroscopy (XPS), in order to analyse the effect of the doping level and deposition temperature on the chemical composition and oxidation states of the samples. The combination of this XPS-based study with other techniques, such as TEM or UPS, provides a deeper understanding of the optical and electronic behaviour of these films, supporting ZnO:V as a promising alternative to conventional TCO materials such as indium tin oxide (ITO). |
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