Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors

Raman spectra of aluminum nitride (AlN) under pressure have been measured up to 25GPa, i.e., beyond the onset of the wurtzite-to-rocksalt phase transition around 20GPa. The experimental pressure coefficients for all the Raman-active modes of the wurtzite phase are reported and compared to those obta...

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Author: Serrano Gutiérrez, Jorge
Format: article
Status:Published version
Publication Date:2008
Country:España
Institution:Universidad de Valladolid
Repository:UVaDOC. Repositorio Documental de la Universidad de Valladolid
OAI Identifier:oai:uvadoc.uva.es:10324/65306
Online Access:https://doi.org/10.1103/PhysRevB.77.205204
https://uvadoc.uva.es/handle/10324/65306
Access Level:Open access
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spelling Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductorsSerrano Gutiérrez, JorgeRaman spectra of aluminum nitride (AlN) under pressure have been measured up to 25GPa, i.e., beyond the onset of the wurtzite-to-rocksalt phase transition around 20GPa. The experimental pressure coefficients for all the Raman-active modes of the wurtzite phase are reported and compared to those obtained from ab initio lattice dynamical calculations, as well as to previous experimental and theoretical results. The pressure coefficients of all the Raman-active modes in wurtzite-type semiconductors (AlN, GaN, InN, ZnO, and BeO), as well as the relatively low bulk modulus and phase transition pressure in wurtzite AlN, are discussed in the light of the pressure dependence of the structural crystal anisotropy in wurtzite semiconductors. On pressure release, AlN partially returns to the wurtzite phase below 1.3GPa but the presence of a rocksalt phase in AlN was observed at pressures as low as 1.3GPa, as evidenced by comparing the experimental Raman spectra to calculated one- and two-phonon densities of states of the rocksalt phase.MCYTGeneralitat de CatalunyaGeneralitat ValencianaSpanish MECCONACYTCNS IPICYTAmerican Physical Society2008info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://doi.org/10.1103/PhysRevB.77.205204https://uvadoc.uva.es/handle/10324/65306reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidInglésinfo:eu-repo/semantics/openAccessoai:uvadoc.uva.es:10324/653062026-06-13T12:44:47Z
dc.title.none.fl_str_mv Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors
title Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors
spellingShingle Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors
Serrano Gutiérrez, Jorge
title_short Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors
title_full Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors
title_fullStr Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors
title_full_unstemmed Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors
title_sort Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors
dc.creator.none.fl_str_mv Serrano Gutiérrez, Jorge
author Serrano Gutiérrez, Jorge
author_facet Serrano Gutiérrez, Jorge
author_role author
description Raman spectra of aluminum nitride (AlN) under pressure have been measured up to 25GPa, i.e., beyond the onset of the wurtzite-to-rocksalt phase transition around 20GPa. The experimental pressure coefficients for all the Raman-active modes of the wurtzite phase are reported and compared to those obtained from ab initio lattice dynamical calculations, as well as to previous experimental and theoretical results. The pressure coefficients of all the Raman-active modes in wurtzite-type semiconductors (AlN, GaN, InN, ZnO, and BeO), as well as the relatively low bulk modulus and phase transition pressure in wurtzite AlN, are discussed in the light of the pressure dependence of the structural crystal anisotropy in wurtzite semiconductors. On pressure release, AlN partially returns to the wurtzite phase below 1.3GPa but the presence of a rocksalt phase in AlN was observed at pressures as low as 1.3GPa, as evidenced by comparing the experimental Raman spectra to calculated one- and two-phonon densities of states of the rocksalt phase.
publishDate 2008
dc.date.none.fl_str_mv 2008
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://doi.org/10.1103/PhysRevB.77.205204
https://uvadoc.uva.es/handle/10324/65306
url https://doi.org/10.1103/PhysRevB.77.205204
https://uvadoc.uva.es/handle/10324/65306
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname:Universidad de Valladolid
instname_str Universidad de Valladolid
reponame_str UVaDOC. Repositorio Documental de la Universidad de Valladolid
collection UVaDOC. Repositorio Documental de la Universidad de Valladolid
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301629

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