Raman scattering of InSb quantum dots grown on InP substrates

In this paper we present the Raman scattering of self-assembled InSb dots grown on (001) oriented InP substrates. The samples were grown by pulsed molecular beam epitaxy mode. Two types of samples have been investigated. In one type the InSb dots were capped with 200 monolayers of InP; in the other...

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Autores: Armelles Reig, G., Utzmeier, Thomas, Postigo Resa, Pablo Aitor, Briones Fernández-Pola, Fernando, Ferrer, J. C., Peiró Martínez, Francisca, Cornet i Calveras, Albert
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1997
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/24783
Acceso en línea:https://hdl.handle.net/2445/24783
Access Level:acceso abierto
Palabra clave:Electrònica quàntica
Efecte Raman
Quantum electronics
Raman effect
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spelling Raman scattering of InSb quantum dots grown on InP substratesArmelles Reig, G.Utzmeier, ThomasPostigo Resa, Pablo AitorBriones Fernández-Pola, FernandoFerrer, J. C.Peiró Martínez, FranciscaCornet i Calveras, AlbertElectrònica quànticaEfecte RamanQuantum electronicsRaman effectIn this paper we present the Raman scattering of self-assembled InSb dots grown on (001) oriented InP substrates. The samples were grown by pulsed molecular beam epitaxy mode. Two types of samples have been investigated. In one type the InSb dots were capped with 200 monolayers of InP; in the other type no capping was deposited after the InSb dot formation. We observe two peaks in the Raman spectra of the uncapped dot, while only one peak is observed in the Raman spectra of the capped dots. In the case of the uncapped dots the peaks are attributed to LO-like and TO-like vibration of completely relaxed InSb dots, in agreement with high resolution transmission electron microscopy photographs. The Raman spectra of the capped dot suggest a different strain state in the dot due to the capping layer.American Institute of Physics1997info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/24783Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.365169Journal of Applied Physics, 1997, vol. 81, núm. 9, p. 6339-6342http://dx.doi.org/10.1063/1.365169(c) American Institute of Physics, 1997info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/247832026-05-27T06:46:51Z
dc.title.none.fl_str_mv Raman scattering of InSb quantum dots grown on InP substrates
title Raman scattering of InSb quantum dots grown on InP substrates
spellingShingle Raman scattering of InSb quantum dots grown on InP substrates
Armelles Reig, G.
Electrònica quàntica
Efecte Raman
Quantum electronics
Raman effect
title_short Raman scattering of InSb quantum dots grown on InP substrates
title_full Raman scattering of InSb quantum dots grown on InP substrates
title_fullStr Raman scattering of InSb quantum dots grown on InP substrates
title_full_unstemmed Raman scattering of InSb quantum dots grown on InP substrates
title_sort Raman scattering of InSb quantum dots grown on InP substrates
dc.creator.none.fl_str_mv Armelles Reig, G.
Utzmeier, Thomas
Postigo Resa, Pablo Aitor
Briones Fernández-Pola, Fernando
Ferrer, J. C.
Peiró Martínez, Francisca
Cornet i Calveras, Albert
author Armelles Reig, G.
author_facet Armelles Reig, G.
Utzmeier, Thomas
Postigo Resa, Pablo Aitor
Briones Fernández-Pola, Fernando
Ferrer, J. C.
Peiró Martínez, Francisca
Cornet i Calveras, Albert
author_role author
author2 Utzmeier, Thomas
Postigo Resa, Pablo Aitor
Briones Fernández-Pola, Fernando
Ferrer, J. C.
Peiró Martínez, Francisca
Cornet i Calveras, Albert
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Electrònica quàntica
Efecte Raman
Quantum electronics
Raman effect
topic Electrònica quàntica
Efecte Raman
Quantum electronics
Raman effect
description In this paper we present the Raman scattering of self-assembled InSb dots grown on (001) oriented InP substrates. The samples were grown by pulsed molecular beam epitaxy mode. Two types of samples have been investigated. In one type the InSb dots were capped with 200 monolayers of InP; in the other type no capping was deposited after the InSb dot formation. We observe two peaks in the Raman spectra of the uncapped dot, while only one peak is observed in the Raman spectra of the capped dots. In the case of the uncapped dots the peaks are attributed to LO-like and TO-like vibration of completely relaxed InSb dots, in agreement with high resolution transmission electron microscopy photographs. The Raman spectra of the capped dot suggest a different strain state in the dot due to the capping layer.
publishDate 1997
dc.date.none.fl_str_mv 1997
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/24783
url https://hdl.handle.net/2445/24783
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.365169
Journal of Applied Physics, 1997, vol. 81, núm. 9, p. 6339-6342
http://dx.doi.org/10.1063/1.365169
dc.rights.none.fl_str_mv (c) American Institute of Physics, 1997
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics, 1997
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,298079

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