Mathematical model of IR-drop voltage in the power distribution network of SOCs with flip-chip packages. Draft
This report is devoted to analyze the IR-drop voltage of a PDN which supplies a SOC with a flip-chip package. The aim of this report is to find analytic expressions for the IR-drop as a function of the circuit parameters (dimensions, metal coverage, current density) that allow SOC designers to take...
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| Tipo de recurso: | informe técnico |
| Fecha de publicación: | 2009 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/441969 |
| Acceso en línea: | https://hdl.handle.net/2117/441969 |
| Access Level: | acceso abierto |
| Palabra clave: | IR-drop Power delivery network (PDN) System on a chip (SOC) Àrees temàtiques de la UPC::Enginyeria electrònica Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats |
| Sumario: | This report is devoted to analyze the IR-drop voltage of a PDN which supplies a SOC with a flip-chip package. The aim of this report is to find analytic expressions for the IR-drop as a function of the circuit parameters (dimensions, metal coverage, current density) that allow SOC designers to take correct decisions during the design of a good and reliable PDN. |
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