Scanning electron acoustic microscopy of indium-doped semi-insulating GaAs
Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoratio...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1993 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/58990 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/58990 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Dislocations Behavior Física de materiales |
| Sumario: | Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoration contribute to the SEAM contrast. |
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