Application of scanning electron acoustic microscopy to the characterization of n-type and semiinsulating GaAs
A series of GaAs wafers with different doping levels and electrical resistivity has been used to investigate the scanning electron acoustic microscopy (SEAM) application to the characterization of this material. It has been found that SEAM is particularly useful to characterize semi-insulating GaAs...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1992 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/58995 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/58995 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Signal Física de materiales |
| Sumario: | A series of GaAs wafers with different doping levels and electrical resistivity has been used to investigate the scanning electron acoustic microscopy (SEAM) application to the characterization of this material. It has been found that SEAM is particularly useful to characterize semi-insulating GaAs as compared with n-type material. The SEAM signal generation mechanisms in GaAs are discussed. |
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