Nanoscale, surface-confined phase separation by electron beam induced oxidation
Electron-assisted oxidation of Co-Si-based focused electron beam induced deposition (FEBID) materials is shown to form a 2-4 nm metal oxide surface layer on top of an electrically insulating silicon oxide layer less than 10 nm thick. Differences between thermal and electron-induced oxidation on the...
| Autores: | , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/396141 |
| Acceso en línea: | http://hdl.handle.net/10261/396141 https://api.elsevier.com/content/abstract/scopus_id/85197502869 |
| Access Level: | acceso abierto |
| Palabra clave: | Electron beams Oxidation Phase separation Silicon compounds http://metadata.un.org/sdg/9 Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation |
| Sumario: | Electron-assisted oxidation of Co-Si-based focused electron beam induced deposition (FEBID) materials is shown to form a 2-4 nm metal oxide surface layer on top of an electrically insulating silicon oxide layer less than 10 nm thick. Differences between thermal and electron-induced oxidation on the resulting microstructure are illustrated. |
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