Using electron and ion beams on carbon nanotube-based devices. Effects and considerations for nanofabrication
This work aims to establish the optimal conditions for contacting carbon nanotubes (CNT) using charged beams. First, we study the effect of charged beams on CNT-Field Effect Transistors (CNTFETs) by monitoring the CNTFET electrical characteristics simultaneously to the charged beam irradiation. Then...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2009 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/414691 |
| Acceso en línea: | http://hdl.handle.net/10261/414691 https://api.elsevier.com/content/abstract/scopus_id/67349122030 |
| Access Level: | acceso abierto |
| Palabra clave: | Carbon nanotube Charged beam Electron beam-induced-deposition Irradiation http://metadata.un.org/sdg/9 Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation |
| Sumario: | This work aims to establish the optimal conditions for contacting carbon nanotubes (CNT) using charged beams. First, we study the effect of charged beams on CNT-Field Effect Transistors (CNTFETs) by monitoring the CNTFET electrical characteristics simultaneously to the charged beam irradiation. Then, we establish the conditions for using electron and ion beam-induced-deposition of metal to define contacts to CNT. We demonstrate that by avoiding excessive charging of the CNTFET area during fabrication, devices with good electrical performance can be obtained. © 2008 Elsevier B.V. All rights reserved. |
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