Cathodoluminescence microscopy and spectroscopy of porous n-InP
The luminescence of porous InP prepared by electrochemical etching is investigated by cathodoluminescence (CL) in a scanning electron microscope (SEM). Anodization causes a strong reduction of CL intensity as well as a blue spectral shift. Additional blue shift and enhancement of CL intensity is obs...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2005 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/51052 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/51052 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Visible Photoluminescence Gap Gaas Uniform Layers Pores Física de materiales |
| Sumario: | The luminescence of porous InP prepared by electrochemical etching is investigated by cathodoluminescence (CL) in a scanning electron microscope (SEM). Anodization causes a strong reduction of CL intensity as well as a blue spectral shift. Additional blue shift and enhancement of CL intensity is observed in samples cracked in vacuum by the effect of the SEM electron beam, which is explained by the reduction of the influence of surface states on the recombination mechanism. The relationship of the CL spatial distribution with the multilayer porous structure is described. |
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