On the formation of the porous structure in nanostructured a-Si coatings deposited by dc magnetron sputtering at oblique angles
The formation of the porous structure in dc magnetron sputtered amorphous silicon thin films at low temperatures is studied when using helium and/or argon as the processing gas. In each case, a-Si thin films were simultaneously grown at two different locations in the reactor which led to the assembl...
| Autores: | , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2014 |
| País: | España |
| Institución: | Universidad de Sevilla (US) |
| Repositorio: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:idus.us.es:11441/81125 |
| Acceso en línea: | https://hdl.handle.net/11441/81125 https://doi.org/10.1088/0957-4484/25/35/355705 |
| Access Level: | acceso abierto |
| Palabra clave: | Porous silicon Oblique angle deposition Growth model Monte Carlo simulation Magnetron sputtering Porosity formation Nanostructure |
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On the formation of the porous structure in nanostructured a-Si coatings deposited by dc magnetron sputtering at oblique anglesFortio Godinho, Vanda CristinaMoskovkin, P.Álvarez Molina, RafaelCaballero Hernández, JaimeSchierholz, R.Bera, B.Demarche, J.Palmero Acebedo, AlbertoFernández Camacho, AsunciónLucas, S.Porous siliconOblique angle depositionGrowth modelMonte Carlo simulationMagnetron sputteringPorosity formationNanostructureThe formation of the porous structure in dc magnetron sputtered amorphous silicon thin films at low temperatures is studied when using helium and/or argon as the processing gas. In each case, a-Si thin films were simultaneously grown at two different locations in the reactor which led to the assembly of different porous structures. The set of four fabricated samples has been analyzed at the microstructural level to elucidate the characteristics of the porous structure under the different deposition conditions. With the help of a growth model, we conclude that the chemical nature of the sputter gas not only affects the sputtering mechanism of Si atoms from the target and their subsequent transport in the gaseous/plasma phase towards the film, but also the pore formation mechanism and dynamics. When Ar is used, pores emerge as a direct result of the shadowing processes of Si atoms, in agreement with Thornton's structure zone model. The introduction of He produces, in addition to the shadowing effects, a new process where a degree of mobility results in the coarsening of small pores. Our results also highlight the influence of the composition of sputtering gas and tilt angles (for oblique angle deposition) on the formation of open and/or occluded porosityEuropean Union CT-REGPOT-2011-1-285895Consejo Superior de Investigaciones Científicas PIE 201060E102, PIE 201460E018Ministerio de Economía y Competitividad CSD2008–00023, CTQ2012-32519, MAT2013-40852-RJunta de Andalucía TEP217 PE2012, TEP862, PE2010-FQM-6900Institute of Physics Publishing2014info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/81125https://doi.org/10.1088/0957-4484/25/35/355705reponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésNanotechnology, 25, 355705-.CT-REGPOT-2011-1-285895PIE 201060E102PIE 201460E018CSD2008–00023CTQ2012-32519MAT2013-40852-RTEP217 PE2012TEP862PE2010-FQM-6900http://dx.doi.org/10.1088/0957-4484/25/35/355705info:eu-repo/semantics/openAccessoai:idus.us.es:11441/811252026-06-17T12:51:07Z |
| dc.title.none.fl_str_mv |
On the formation of the porous structure in nanostructured a-Si coatings deposited by dc magnetron sputtering at oblique angles |
| title |
On the formation of the porous structure in nanostructured a-Si coatings deposited by dc magnetron sputtering at oblique angles |
| spellingShingle |
On the formation of the porous structure in nanostructured a-Si coatings deposited by dc magnetron sputtering at oblique angles Fortio Godinho, Vanda Cristina Porous silicon Oblique angle deposition Growth model Monte Carlo simulation Magnetron sputtering Porosity formation Nanostructure |
| title_short |
On the formation of the porous structure in nanostructured a-Si coatings deposited by dc magnetron sputtering at oblique angles |
| title_full |
On the formation of the porous structure in nanostructured a-Si coatings deposited by dc magnetron sputtering at oblique angles |
| title_fullStr |
On the formation of the porous structure in nanostructured a-Si coatings deposited by dc magnetron sputtering at oblique angles |
| title_full_unstemmed |
On the formation of the porous structure in nanostructured a-Si coatings deposited by dc magnetron sputtering at oblique angles |
| title_sort |
On the formation of the porous structure in nanostructured a-Si coatings deposited by dc magnetron sputtering at oblique angles |
| dc.creator.none.fl_str_mv |
Fortio Godinho, Vanda Cristina Moskovkin, P. Álvarez Molina, Rafael Caballero Hernández, Jaime Schierholz, R. Bera, B. Demarche, J. Palmero Acebedo, Alberto Fernández Camacho, Asunción Lucas, S. |
| author |
Fortio Godinho, Vanda Cristina |
| author_facet |
Fortio Godinho, Vanda Cristina Moskovkin, P. Álvarez Molina, Rafael Caballero Hernández, Jaime Schierholz, R. Bera, B. Demarche, J. Palmero Acebedo, Alberto Fernández Camacho, Asunción Lucas, S. |
| author_role |
author |
| author2 |
Moskovkin, P. Álvarez Molina, Rafael Caballero Hernández, Jaime Schierholz, R. Bera, B. Demarche, J. Palmero Acebedo, Alberto Fernández Camacho, Asunción Lucas, S. |
| author2_role |
author author author author author author author author author |
| dc.subject.none.fl_str_mv |
Porous silicon Oblique angle deposition Growth model Monte Carlo simulation Magnetron sputtering Porosity formation Nanostructure |
| topic |
Porous silicon Oblique angle deposition Growth model Monte Carlo simulation Magnetron sputtering Porosity formation Nanostructure |
| description |
The formation of the porous structure in dc magnetron sputtered amorphous silicon thin films at low temperatures is studied when using helium and/or argon as the processing gas. In each case, a-Si thin films were simultaneously grown at two different locations in the reactor which led to the assembly of different porous structures. The set of four fabricated samples has been analyzed at the microstructural level to elucidate the characteristics of the porous structure under the different deposition conditions. With the help of a growth model, we conclude that the chemical nature of the sputter gas not only affects the sputtering mechanism of Si atoms from the target and their subsequent transport in the gaseous/plasma phase towards the film, but also the pore formation mechanism and dynamics. When Ar is used, pores emerge as a direct result of the shadowing processes of Si atoms, in agreement with Thornton's structure zone model. The introduction of He produces, in addition to the shadowing effects, a new process where a degree of mobility results in the coarsening of small pores. Our results also highlight the influence of the composition of sputtering gas and tilt angles (for oblique angle deposition) on the formation of open and/or occluded porosity |
| publishDate |
2014 |
| dc.date.none.fl_str_mv |
2014 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/11441/81125 https://doi.org/10.1088/0957-4484/25/35/355705 |
| url |
https://hdl.handle.net/11441/81125 https://doi.org/10.1088/0957-4484/25/35/355705 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
Nanotechnology, 25, 355705-. CT-REGPOT-2011-1-285895 PIE 201060E102 PIE 201460E018 CSD2008–00023 CTQ2012-32519 MAT2013-40852-R TEP217 PE2012 TEP862 PE2010-FQM-6900 http://dx.doi.org/10.1088/0957-4484/25/35/355705 |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
application/pdf application/pdf |
| dc.publisher.none.fl_str_mv |
Institute of Physics Publishing |
| publisher.none.fl_str_mv |
Institute of Physics Publishing |
| dc.source.none.fl_str_mv |
reponame:idUS. Depósito de Investigación de la Universidad de Sevilla instname:Universidad de Sevilla (US) |
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Universidad de Sevilla (US) |
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idUS. Depósito de Investigación de la Universidad de Sevilla |
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idUS. Depósito de Investigación de la Universidad de Sevilla |
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1869420770259632128 |
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15.300719 |