Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors
We revise the possibility of having an amplified surface potential in ferroelectricfield-effect transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett.8, 405 (2008)]. We show that the negative-capacitance regime that allows for such amplification is actually bounded by the appearance of m...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2010 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:115986 |
| Acceso en línea: | https://ddd.uab.cat/record/115986 https://dx.doi.org/urn:doi:10.1063/1.3494533 |
| Access Level: | acceso abierto |
| Palabra clave: | Field effect transistors Polarization Ferroelectric phase transitions Semiconductors Capacitance Surface charge |
| Sumario: | We revise the possibility of having an amplified surface potential in ferroelectricfield-effect transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett.8, 405 (2008)]. We show that the negative-capacitance regime that allows for such amplification is actually bounded by the appearance of multidomain ferroelectricity. This imposes a severe limit to the maximum step-up of the surface potential obtainable in the device. We indicate new device design rules taking into account this scenario. |
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