Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors
A physics-based model for the surface potential and drain current for monolayertransition metal dichalcogenide (TMD) field-effect transistor is presented. Taking into account the two-dimensional (2D) density-of-states of the atomic layer thick TMD and its impact on the quantum capacitance, a model f...
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| Tipo de documento: | artigo |
| Data de publicação: | 2012 |
| País: | España |
| Recursos: | Universitat Autònoma de Barcelona |
| Repositório: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglês |
| OAI Identifier: | oai:ddd.uab.cat:115963 |
| Acesso em linha: | https://ddd.uab.cat/record/115963 https://dx.doi.org/urn:doi:10.1063/1.4770313 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Monolayers Transistors Field effect transistors Surface charge Capacitance Ballistic transport |
| Resumo: | A physics-based model for the surface potential and drain current for monolayertransition metal dichalcogenide (TMD) field-effect transistor is presented. Taking into account the two-dimensional (2D) density-of-states of the atomic layer thick TMD and its impact on the quantum capacitance, a model for the surface potential is presented. Next, considering a drift-diffusion mechanism for the carrier transport along the monolayer TMD, an explicit expression for the drain current has been derived. The model has been benchmarked with a measured prototype transistor. Based on the proposed model, the device design window targeting low-power applications is discussed. |
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