Novel materials and processes for gate dielectrics on Silicon carbide
There is considerable evidence of the need for a semiconductor technology which exceeds the limitations imposed by silicon across a wide spectrum of industrial applications. Wide bandgap semiconductor, such as silicon carbide (SiC), gallium nitride (GaN) and diamond, offer the potential to overcome...
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| Tipo de recurso: | tesis doctoral |
| Estado: | Versión publicada |
| Fecha de publicación: | 2005 |
| País: | España |
| Institución: | CBUC, CESCA |
| Repositorio: | TDR. Tesis Doctorales en Red |
| OAI Identifier: | oai:www.tdx.cat:10803/3381 |
| Acceso en línea: | http://www.tdx.cat/TDX-0216107-165217 http://hdl.handle.net/10803/3381 |
| Access Level: | acceso abierto |
| Palabra clave: | Gate dielectrics Interface properties Silicon carbide Ciències Experimentals 537 |
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Novel materials and processes for gate dielectrics on Silicon carbidePérez Tomàs, AmadorGate dielectricsInterface propertiesSilicon carbideCiències Experimentals537There is considerable evidence of the need for a semiconductor technology which exceeds the limitations imposed by silicon across a wide spectrum of industrial applications. Wide bandgap semiconductor, such as silicon carbide (SiC), gallium nitride (GaN) and diamond, offer the potential to overcome both the temperature and voltage blocking limitations of Si. SiC is nowadays the most attractive candidate, offering significant potential advantages at both high temperature and high voltage levels whilst benefiting from tractable materials technology. Moreover, SiC is the only that can be thermally oxidized to form a high quality native oxide (SiO2), which enables the fabrication of MOS based devices. <br/>However, very near the definitive emergence, the SiC technology needs to address two fundamental limitations: The price of the wafers and the poor SiC/SiO2 interface. The high density of imperfections encountered at the SiC/oxide interface represents a major obstacle in the development of functional SiC devices. The main efforts of this thesis have been directed to the detection and reduction of interface traps in the oxide/SiC interface. To achieve this demanding objective, two different ways have been contemplated: (1) Investigations have been carried out to improve the thermal oxidation or even to improve the formation of the interface with alternative techniques as nitridation or deposited oxides. (2) The classical insulator made up with SiO2 has been replaced by other innovative dielectrics.<br/>Innovative gate fabrication processes have been proposed in this thesis using deposited SiO2 gate oxides from PECVD with silane and TEOS as precursors. SiO2-TEOS deposited oxides are an alternative to thermal oxidation. 4H-SiC MOSFET with mobilities up to 38-45 cm2/Vs [(0001) face] and 216 cm2/Vs [(11-20) face] have been fabricated. <br/>We have demonstrated that the thermal oxidation of Ta2Si is a simple way to achieve a high-k dielectric on SiC (and on Si). We have fabricated one of the first well behaved high-k MOSFET on SiC with a mobility peak up to 45 cm2/Vs<br/>In the last section, a field-effect mobility model including Coulomb scattering at interface traps has been proposed fitting the experimental channel mobility of SiC MOSFETs and the device behavior depending on the density of interface traps, the substrate doping level and the temperature.Universitat Autònoma de BarcelonaPascual i Gainza, JordiGodignon, PhilippeUniversitat Autònoma de Barcelona. Departament de Física2011200720052007info:eu-repo/semantics/doctoralThesisinfo:eu-repo/semantics/publishedVersionapplication/pdfapplication/pdfhttp://www.tdx.cat/TDX-0216107-165217http://hdl.handle.net/10803/3381TDX (Tesis Doctorals en Xarxa)reponame:TDR. Tesis Doctorales en Redinstname:CBUC, CESCAInglésADVERTIMENT. L'accés als continguts d'aquesta tesi doctoral i la seva utilització ha de respectar els drets de la persona autora. Pot ser utilitzada per a consulta o estudi personal, així com en activitats o materials d'investigació i docència en els termes establerts a l'art. 32 del Text Refós de la Llei de Propietat Intel·lectual (RDL 1/1996). Per altres utilitzacions es requereix l'autorització prèvia i expressa de la persona autora. En qualsevol cas, en la utilització dels seus continguts caldrà indicar de forma clara el nom i cognoms de la persona autora i el títol de la tesi doctoral. No s'autoritza la seva reproducció o altres formes d'explotació efectuades amb finalitats de lucre ni la seva comunicació pública des d'un lloc aliè al servei TDX. Tampoc s'autoritza la presentació del seu contingut en una finestra o marc aliè a TDX (framing). Aquesta reserva de drets afecta tant als continguts de la tesi com als seus resums i índexs.info:eu-repo/semantics/openAccessoai:www.tdx.cat:10803/33812026-06-14T12:46:07Z |
| dc.title.none.fl_str_mv |
Novel materials and processes for gate dielectrics on Silicon carbide |
| title |
Novel materials and processes for gate dielectrics on Silicon carbide |
| spellingShingle |
Novel materials and processes for gate dielectrics on Silicon carbide Pérez Tomàs, Amador Gate dielectrics Interface properties Silicon carbide Ciències Experimentals 537 |
| title_short |
Novel materials and processes for gate dielectrics on Silicon carbide |
| title_full |
Novel materials and processes for gate dielectrics on Silicon carbide |
| title_fullStr |
Novel materials and processes for gate dielectrics on Silicon carbide |
| title_full_unstemmed |
Novel materials and processes for gate dielectrics on Silicon carbide |
| title_sort |
Novel materials and processes for gate dielectrics on Silicon carbide |
| dc.creator.none.fl_str_mv |
Pérez Tomàs, Amador |
| author |
Pérez Tomàs, Amador |
| author_facet |
Pérez Tomàs, Amador |
| author_role |
author |
| dc.contributor.none.fl_str_mv |
Pascual i Gainza, Jordi Godignon, Philippe Universitat Autònoma de Barcelona. Departament de Física |
| dc.subject.none.fl_str_mv |
Gate dielectrics Interface properties Silicon carbide Ciències Experimentals 537 |
| topic |
Gate dielectrics Interface properties Silicon carbide Ciències Experimentals 537 |
| description |
There is considerable evidence of the need for a semiconductor technology which exceeds the limitations imposed by silicon across a wide spectrum of industrial applications. Wide bandgap semiconductor, such as silicon carbide (SiC), gallium nitride (GaN) and diamond, offer the potential to overcome both the temperature and voltage blocking limitations of Si. SiC is nowadays the most attractive candidate, offering significant potential advantages at both high temperature and high voltage levels whilst benefiting from tractable materials technology. Moreover, SiC is the only that can be thermally oxidized to form a high quality native oxide (SiO2), which enables the fabrication of MOS based devices. <br/>However, very near the definitive emergence, the SiC technology needs to address two fundamental limitations: The price of the wafers and the poor SiC/SiO2 interface. The high density of imperfections encountered at the SiC/oxide interface represents a major obstacle in the development of functional SiC devices. The main efforts of this thesis have been directed to the detection and reduction of interface traps in the oxide/SiC interface. To achieve this demanding objective, two different ways have been contemplated: (1) Investigations have been carried out to improve the thermal oxidation or even to improve the formation of the interface with alternative techniques as nitridation or deposited oxides. (2) The classical insulator made up with SiO2 has been replaced by other innovative dielectrics.<br/>Innovative gate fabrication processes have been proposed in this thesis using deposited SiO2 gate oxides from PECVD with silane and TEOS as precursors. SiO2-TEOS deposited oxides are an alternative to thermal oxidation. 4H-SiC MOSFET with mobilities up to 38-45 cm2/Vs [(0001) face] and 216 cm2/Vs [(11-20) face] have been fabricated. <br/>We have demonstrated that the thermal oxidation of Ta2Si is a simple way to achieve a high-k dielectric on SiC (and on Si). We have fabricated one of the first well behaved high-k MOSFET on SiC with a mobility peak up to 45 cm2/Vs<br/>In the last section, a field-effect mobility model including Coulomb scattering at interface traps has been proposed fitting the experimental channel mobility of SiC MOSFETs and the device behavior depending on the density of interface traps, the substrate doping level and the temperature. |
| publishDate |
2005 |
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2005 2007 2007 2011 |
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info:eu-repo/semantics/doctoralThesis info:eu-repo/semantics/publishedVersion |
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doctoralThesis |
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publishedVersion |
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http://www.tdx.cat/TDX-0216107-165217 http://hdl.handle.net/10803/3381 |
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http://www.tdx.cat/TDX-0216107-165217 http://hdl.handle.net/10803/3381 |
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Inglés |
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Inglés |
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info:eu-repo/semantics/openAccess |
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openAccess |
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application/pdf application/pdf |
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Universitat Autònoma de Barcelona |
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Universitat Autònoma de Barcelona |
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TDX (Tesis Doctorals en Xarxa) reponame:TDR. Tesis Doctorales en Red instname:CBUC, CESCA |
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CBUC, CESCA |
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TDR. Tesis Doctorales en Red |
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TDR. Tesis Doctorales en Red |
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15,301603 |