Scaling of graphene field-effect transistors supported on hexagonal boron nitride

The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field-effect transistors (GFETs) to get a competitive radio-frequen...

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Autores: Feijoo, Pedro Carlos|||0000-0002-7653-4573, Pasadas, Francisco|||0000-0003-3992-9864, Iglesias, José M.|||0000-0003-0834-1435, Martín, María J., Rengel, Raul|||0000-0003-4976-2244, Li, Changfeng, Kim, Wonjae, Riikonen, Juha, Lipsanen, Harri|||0000-0003-2487-4645, Jiménez, David|||0000-0002-8148-198X
Tipo de recurso: artículo
Fecha de publicación:2017
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:288296
Acceso en línea:https://ddd.uab.cat/record/288296
https://dx.doi.org/urn:doi:10.1088/1361-6528/aa9094
Access Level:acceso abierto
Palabra clave:Graphene
Boron nitride
Carrier mobility
Field-effect transistor
Radio-frequency
Scattering mechanisms
Short channel
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spelling Scaling of graphene field-effect transistors supported on hexagonal boron nitrideRadio-frequency stability as a limiting factorFeijoo, Pedro Carlos|||0000-0002-7653-4573Pasadas, Francisco|||0000-0003-3992-9864Iglesias, José M.|||0000-0003-0834-1435Martín, María J.Rengel, Raul|||0000-0003-4976-2244Li, ChangfengKim, WonjaeRiikonen, JuhaLipsanen, Harri|||0000-0003-2487-4645Jiménez, David|||0000-0002-8148-198XGrapheneBoron nitrideCarrier mobilityField-effect transistorRadio-frequencyScattering mechanismsShort channelThe quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field-effect transistors (GFETs) to get a competitive radio-frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte Carlo simulator that accounted for the relevant scattering mechanisms (intrinsic phonons, scattering with impurities and defects, etc). This information is fed into a self-consistent simulator, which solves the drift-diffusion equation coupled with the two-dimensional Poisson's equation to take full account of short channel effects. Simulated GFET characteristics were benchmarked against experimental data from our fabricated devices. Our simulations show that scalability is supposed to bring to RF performance an improvement that is, however, highly limited by instability. Despite the possibility of a lower performance, a careful choice of the bias point can avoid instability. Nevertheless, maximum oscillation frequencies are still achievable in the THz region for channel lengths of a few hundreds of nanometers. 22017-01-0120172017-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/288296https://dx.doi.org/urn:doi:10.1088/1361-6528/aa9094reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengEuropean Commission https://doi.org/10.13039/501100000780 696656Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2013-42622-RMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2015-67462-C2-1-RMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2016-80839-PMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 FJCI-2014-19643Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-384open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2882962026-06-06T12:50:31Z
dc.title.none.fl_str_mv Scaling of graphene field-effect transistors supported on hexagonal boron nitride
Radio-frequency stability as a limiting factor
title Scaling of graphene field-effect transistors supported on hexagonal boron nitride
spellingShingle Scaling of graphene field-effect transistors supported on hexagonal boron nitride
Feijoo, Pedro Carlos|||0000-0002-7653-4573
Graphene
Boron nitride
Carrier mobility
Field-effect transistor
Radio-frequency
Scattering mechanisms
Short channel
title_short Scaling of graphene field-effect transistors supported on hexagonal boron nitride
title_full Scaling of graphene field-effect transistors supported on hexagonal boron nitride
title_fullStr Scaling of graphene field-effect transistors supported on hexagonal boron nitride
title_full_unstemmed Scaling of graphene field-effect transistors supported on hexagonal boron nitride
title_sort Scaling of graphene field-effect transistors supported on hexagonal boron nitride
dc.creator.none.fl_str_mv Feijoo, Pedro Carlos|||0000-0002-7653-4573
Pasadas, Francisco|||0000-0003-3992-9864
Iglesias, José M.|||0000-0003-0834-1435
Martín, María J.
Rengel, Raul|||0000-0003-4976-2244
Li, Changfeng
Kim, Wonjae
Riikonen, Juha
Lipsanen, Harri|||0000-0003-2487-4645
Jiménez, David|||0000-0002-8148-198X
author Feijoo, Pedro Carlos|||0000-0002-7653-4573
author_facet Feijoo, Pedro Carlos|||0000-0002-7653-4573
Pasadas, Francisco|||0000-0003-3992-9864
Iglesias, José M.|||0000-0003-0834-1435
Martín, María J.
Rengel, Raul|||0000-0003-4976-2244
Li, Changfeng
Kim, Wonjae
Riikonen, Juha
Lipsanen, Harri|||0000-0003-2487-4645
Jiménez, David|||0000-0002-8148-198X
author_role author
author2 Pasadas, Francisco|||0000-0003-3992-9864
Iglesias, José M.|||0000-0003-0834-1435
Martín, María J.
Rengel, Raul|||0000-0003-4976-2244
Li, Changfeng
Kim, Wonjae
Riikonen, Juha
Lipsanen, Harri|||0000-0003-2487-4645
Jiménez, David|||0000-0002-8148-198X
author2_role author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Graphene
Boron nitride
Carrier mobility
Field-effect transistor
Radio-frequency
Scattering mechanisms
Short channel
topic Graphene
Boron nitride
Carrier mobility
Field-effect transistor
Radio-frequency
Scattering mechanisms
Short channel
description The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field-effect transistors (GFETs) to get a competitive radio-frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte Carlo simulator that accounted for the relevant scattering mechanisms (intrinsic phonons, scattering with impurities and defects, etc). This information is fed into a self-consistent simulator, which solves the drift-diffusion equation coupled with the two-dimensional Poisson's equation to take full account of short channel effects. Simulated GFET characteristics were benchmarked against experimental data from our fabricated devices. Our simulations show that scalability is supposed to bring to RF performance an improvement that is, however, highly limited by instability. Despite the possibility of a lower performance, a careful choice of the bias point can avoid instability. Nevertheless, maximum oscillation frequencies are still achievable in the THz region for channel lengths of a few hundreds of nanometers.
publishDate 2017
dc.date.none.fl_str_mv 2
2017-01-01
2017
2017-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/288296
https://dx.doi.org/urn:doi:10.1088/1361-6528/aa9094
url https://ddd.uab.cat/record/288296
https://dx.doi.org/urn:doi:10.1088/1361-6528/aa9094
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv European Commission https://doi.org/10.13039/501100000780 696656
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2013-42622-R
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2015-67462-C2-1-R
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2016-80839-P
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 FJCI-2014-19643
Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-384
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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