Electrically active point defects in n-type 4H¿SiC
An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers ..
| Autores: | , , , , , , , |
|---|---|
| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 1998 |
| País: | España |
| Recursos: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/24815 |
| Acesso em linha: | https://hdl.handle.net/2445/24815 |
| Access Level: | acceso abierto |
| Palavra-chave: | Estructura electrònica Cristal·lografia Electronic structure Crystallography |
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Electrically active point defects in n-type 4H¿SiCDoyle, J. P.Linnarsson, M. K.Pellegrino, PaoloKeskitalo, N.Svensson, Bengt G.Schoner, A.Nordell, N.Lindstrom, J. L.Estructura electrònicaCristal·lografiaElectronic structureCrystallographyAn electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers ..American Institute of Physics2012201219982012info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion4 p.application/pdfhttps://hdl.handle.net/2445/24815Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.368247Journal of Applied Physics, 1998, vol. 84, núm. 3, p. 1354-1357http://dx.doi.org/10.1063/1.368247(c) American Institute of Physics, 1998info:eu-repo/semantics/openAccessoai:recercat.cat:2445/248152026-05-29T05:05:01Z |
| dc.title.none.fl_str_mv |
Electrically active point defects in n-type 4H¿SiC |
| title |
Electrically active point defects in n-type 4H¿SiC |
| spellingShingle |
Electrically active point defects in n-type 4H¿SiC Doyle, J. P. Estructura electrònica Cristal·lografia Electronic structure Crystallography |
| title_short |
Electrically active point defects in n-type 4H¿SiC |
| title_full |
Electrically active point defects in n-type 4H¿SiC |
| title_fullStr |
Electrically active point defects in n-type 4H¿SiC |
| title_full_unstemmed |
Electrically active point defects in n-type 4H¿SiC |
| title_sort |
Electrically active point defects in n-type 4H¿SiC |
| dc.creator.none.fl_str_mv |
Doyle, J. P. Linnarsson, M. K. Pellegrino, Paolo Keskitalo, N. Svensson, Bengt G. Schoner, A. Nordell, N. Lindstrom, J. L. |
| author |
Doyle, J. P. |
| author_facet |
Doyle, J. P. Linnarsson, M. K. Pellegrino, Paolo Keskitalo, N. Svensson, Bengt G. Schoner, A. Nordell, N. Lindstrom, J. L. |
| author_role |
author |
| author2 |
Linnarsson, M. K. Pellegrino, Paolo Keskitalo, N. Svensson, Bengt G. Schoner, A. Nordell, N. Lindstrom, J. L. |
| author2_role |
author author author author author author author |
| dc.subject.none.fl_str_mv |
Estructura electrònica Cristal·lografia Electronic structure Crystallography |
| topic |
Estructura electrònica Cristal·lografia Electronic structure Crystallography |
| description |
An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers .. |
| publishDate |
1998 |
| dc.date.none.fl_str_mv |
1998 2012 2012 2012 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/2445/24815 |
| url |
https://hdl.handle.net/2445/24815 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
Reproducció del document publicat a: http://dx.doi.org/10.1063/1.368247 Journal of Applied Physics, 1998, vol. 84, núm. 3, p. 1354-1357 http://dx.doi.org/10.1063/1.368247 |
| dc.rights.none.fl_str_mv |
(c) American Institute of Physics, 1998 info:eu-repo/semantics/openAccess |
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(c) American Institute of Physics, 1998 |
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openAccess |
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4 p. application/pdf |
| dc.publisher.none.fl_str_mv |
American Institute of Physics |
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American Institute of Physics |
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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) reponame:Recercat. Dipósit de la Recerca de Catalunya instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
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Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
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Recercat. Dipósit de la Recerca de Catalunya |
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Recercat. Dipósit de la Recerca de Catalunya |
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1869420203654250496 |
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15.811543 |