Cita APA

Doyle, J. P., Linnarsson, M. K., Pellegrino, P., Keskitalo, N., Svensson, B. G., Schoner, A., . . . Lindstrom, J. L. (1998). Electrically active point defects in n-type 4H¿SiC.

Citación estilo Chicago

Doyle, J. P., M. K. Linnarsson, Paolo Pellegrino, N. Keskitalo, Bengt G. Svensson, A. Schoner, N. Nordell, y J. L. Lindstrom. Electrically Active Point Defects in N-type 4H¿SiC. 1998.

Cita MLA

Doyle, J. P., et al. Electrically Active Point Defects in N-type 4H¿SiC. 1998.