A fast synthesis route of boron-carbon-nitrogen ultrathin layers towards highly mixed ternary B-C-N phases
We report a direct and fast synthesis route to grow boron-carbon-nitrogen layers based on microwave-assisted plasma enhanced chemical vapour deposition (PECVD) by using methylamine borane as a single source molecular precursor. This easy and inexpensive method allows controlled and reproducible grow...
| Autores: | , , , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2019 |
| País: | España |
| Institución: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/705950 |
| Acceso en línea: | http://hdl.handle.net/10486/705950 https://dx.doi.org/10.1088/2053-1583/ab175c |
| Access Level: | acceso abierto |
| Palabra clave: | Raman spectroscopy Borocarbonitride Optical Bandgap Electronic Transport Measurements Plasma-Enhanced Chemical Vapor Deposition Transmission Electron Microscopy X-Ray Photoelectron Spectroscopy Física |
| Sumario: | We report a direct and fast synthesis route to grow boron-carbon-nitrogen layers based on microwave-assisted plasma enhanced chemical vapour deposition (PECVD) by using methylamine borane as a single source molecular precursor. This easy and inexpensive method allows controlled and reproducible growth of B-C-N layers onto thin Cu foils. Their morphological, structural, chemical, optical and transport properties have been thoroughly characterized by a number of different microscopies, transport and spectroscopic techniques. Though disorder and segregation into C-rich and h-BN-rich domains have been observed in ultrathin flat few layers, high doping levels have been reached, inducing strong modifications of the electronic, optical and transport properties of C-rich and h-BN-rich phases. This synthesis procedure can open new routes towards the achievement of homogeneous highly mixed ternary B-C-N phases |
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