Emergence of large spin-charge interconversion at an oxidized Cu/W interface

Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling...

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Autores: Groen, Inge, Pham, Van Tuong, Ilić, Stefan, Chuvilin, Andrey, Choi, Won Young, Sagasta, Edurne, Vaz, Diogo C., Arango, Isabel C., Ontoso, Nerea, Bergeret, F. Sebastian, Hueso, Luis E., Tokatly, Ilya, Casanova, Félix
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2023
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:dnet:digitalcsic_::39aa08116f1a505a1a3626067ebaa8d9
Acceso en línea:http://hdl.handle.net/10261/342295
Access Level:acceso abierto
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dc.title.none.fl_str_mv Emergence of large spin-charge interconversion at an oxidized Cu/W interface
title Emergence of large spin-charge interconversion at an oxidized Cu/W interface
spellingShingle Emergence of large spin-charge interconversion at an oxidized Cu/W interface
Groen, Inge
title_short Emergence of large spin-charge interconversion at an oxidized Cu/W interface
title_full Emergence of large spin-charge interconversion at an oxidized Cu/W interface
title_fullStr Emergence of large spin-charge interconversion at an oxidized Cu/W interface
title_full_unstemmed Emergence of large spin-charge interconversion at an oxidized Cu/W interface
title_sort Emergence of large spin-charge interconversion at an oxidized Cu/W interface
dc.creator.none.fl_str_mv Groen, Inge
Pham, Van Tuong
Ilić, Stefan
Chuvilin, Andrey
Choi, Won Young
Sagasta, Edurne
Vaz, Diogo C.
Arango, Isabel C.
Ontoso, Nerea
Bergeret, F. Sebastian
Hueso, Luis E.
Tokatly, Ilya
Casanova, Félix
author Groen, Inge
author_facet Groen, Inge
Pham, Van Tuong
Ilić, Stefan
Chuvilin, Andrey
Choi, Won Young
Sagasta, Edurne
Vaz, Diogo C.
Arango, Isabel C.
Ontoso, Nerea
Bergeret, F. Sebastian
Hueso, Luis E.
Tokatly, Ilya
Casanova, Félix
author_role author
author2 Pham, Van Tuong
Ilić, Stefan
Chuvilin, Andrey
Choi, Won Young
Sagasta, Edurne
Vaz, Diogo C.
Arango, Isabel C.
Ontoso, Nerea
Bergeret, F. Sebastian
Hueso, Luis E.
Tokatly, Ilya
Casanova, Félix
author2_role author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Ministerio de Ciencia, Innovación y Universidades (España)
Agencia Estatal de Investigación (España)
Ministerio de Educación, Cultura y Deporte (España)
European Commission
Alexander von Humboldt Foundation
Universidad del País Vasco
Eusko Jaurlaritza
Ministerio de Economía y Competitividad (España)
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
description Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Therefore, investigation of interfaces in spin-orbitronic devices is important. Here, we study the origin of SCI in a Py/Cu/W lateral spin valve and quantify its efficiency. An exhaustive characterization of the interface between Cu and W electrodes uncovers the presence of an oxidized layer (WOx). We determine that the SCI occurs at the Cu/WOx interface with a temperature-independent interfacial spin-loss conductance of G∥≈20×1013Ω−1m−2 and an interfacial spin-charge conductivity σSC=−1600Ω−1cm−1 at 10 K (−800Ω−1cm−1 at 300 K). This corresponds to an efficiency given by the inverse Edelstein length λIEE=− 0.8nm at 10 K (−0.4nm at 300 K), which is remarkably larger than in metal/metal and metal/oxide interfaces and bulk heavy metals. The large SCI efficiency at such an oxidized interface makes it a promising candidate for the magnetic readout in MESO logic devices.
publishDate 2023
dc.date.none.fl_str_mv 2023
2024
2024
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dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/342295
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Groen, Inge; Pham, Van Tuong; Ilić, Stefan; Chuvilin, Andrey; Choi, Won Young; Sagasta, Edurne; Vaz, Diogo C.; Arango, Isabel C.; Ontoso, Nerea; Bergeret, F. S.; Hueso, Luis E.; Tokatly, I. V.; Casanova, Félix; 2023; Supplemental material for Emergence of large spin-charge interconversion at an oxidized Cu/W interface [Dataset]; American Physical Society; https://doi.org/10.1103/PhysRevB.107.184438
https://doi.org/10.1103/PhysRevB.107.184438
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dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
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spelling Emergence of large spin-charge interconversion at an oxidized Cu/W interfaceGroen, IngePham, Van TuongIlić, StefanChuvilin, AndreyChoi, Won YoungSagasta, EdurneVaz, Diogo C.Arango, Isabel C.Ontoso, NereaBergeret, F. SebastianHueso, Luis E.Tokatly, IlyaCasanova, FélixSpin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Therefore, investigation of interfaces in spin-orbitronic devices is important. Here, we study the origin of SCI in a Py/Cu/W lateral spin valve and quantify its efficiency. An exhaustive characterization of the interface between Cu and W electrodes uncovers the presence of an oxidized layer (WOx). We determine that the SCI occurs at the Cu/WOx interface with a temperature-independent interfacial spin-loss conductance of G∥≈20×1013Ω−1m−2 and an interfacial spin-charge conductivity σSC=−1600Ω−1cm−1 at 10 K (−800Ω−1cm−1 at 300 K). This corresponds to an efficiency given by the inverse Edelstein length λIEE=− 0.8nm at 10 K (−0.4nm at 300 K), which is remarkably larger than in metal/metal and metal/oxide interfaces and bulk heavy metals. The large SCI efficiency at such an oxidized interface makes it a promising candidate for the magnetic readout in MESO logic devices.This work was supported by Intel Corporation through the Semiconductor Research Corporation under MSR-INTEL TASK 2017-IN-2744 and the “FEINMAN” Intel Science Technology Center, and by the Spanish MICINN under the Maria de Maeztu Units of Excellence Programme (Grants No. MDM-2016-0618 and No. CEX2020-001038-M) and under Projects No. RTI2018-094861-BI00, No. PID2020-117671GB-I00, No. PID2020-112811GBI00, No. PID2021-122511OB-I00, PID2020-114252GB-I00 (SPIRIT), and TED2021-130292B-C42. W.Y.C. acknowledges a postdoctoral fellowship support from the “Juan de la Cierva Formación” program by the Spanish MICINN (Grant No. FJC 2018-038580-I). E.S. thanks the Spanish MECD for a Ph.D. fellowship (Grant No. FPU14/03102). D.C.V. acknowledges support from the European Commission for a Maria Sklodowska-Curie individual fellowship (Grant No. 892983-SPECTER). N.O. thanks the Spanish MICINN for a Ph.D. fellowship (Grant No. BES-2017-07963). The work of S.I. and F.S.B. was supported by European Union Horizon 2020 Research and Innovation Framework Programme under Grant No. 800923 (SUPERTED). I.V.T. and F.S.B. acknowledges support by Grupos Consolidados UPV/EHU del Gobierno Vasco (Eusko Jaularitza) (Grants No. IT1249-19 and No. IT1591-22). F.S.B. acknowledges financial support by the A. v. Humboldt Foundation.With funding from the Spanish government through the "Severo Ochoa Centre of Excellence" accreditation (CEX2020-001038-M).Peer reviewedAmerican Physical SocietyMinisterio de Ciencia, Innovación y Universidades (España)Agencia Estatal de Investigación (España)Ministerio de Educación, Cultura y Deporte (España)European CommissionAlexander von Humboldt FoundationUniversidad del País VascoEusko JaurlaritzaMinisterio de Economía y Competitividad (España)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202420242023info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10261/342295reponame:DIGITAL.CSIC. 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S.; Hueso, Luis E.; Tokatly, I. V.; Casanova, Félix; 2023; Supplemental material for Emergence of large spin-charge interconversion at an oxidized Cu/W interface [Dataset]; American Physical Society; https://doi.org/10.1103/PhysRevB.107.184438https://doi.org/10.1103/PhysRevB.107.184438Síinfo:eu-repo/semantics/openAccessoai:dnet:digitalcsic_::39aa08116f1a505a1a3626067ebaa8d92026-05-22T06:33:51Z
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