Emergence of large spin-charge interconversion at an oxidized Cu/W interface
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling...
| Autores: | , , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2023 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:dnet:digitalcsic_::39aa08116f1a505a1a3626067ebaa8d9 |
| Acceso en línea: | http://hdl.handle.net/10261/342295 |
| Access Level: | acceso abierto |
| Sumario: | Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Therefore, investigation of interfaces in spin-orbitronic devices is important. Here, we study the origin of SCI in a Py/Cu/W lateral spin valve and quantify its efficiency. An exhaustive characterization of the interface between Cu and W electrodes uncovers the presence of an oxidized layer (WOx). We determine that the SCI occurs at the Cu/WOx interface with a temperature-independent interfacial spin-loss conductance of G∥≈20×1013Ω−1m−2 and an interfacial spin-charge conductivity σSC=−1600Ω−1cm−1 at 10 K (−800Ω−1cm−1 at 300 K). This corresponds to an efficiency given by the inverse Edelstein length λIEE=− 0.8nm at 10 K (−0.4nm at 300 K), which is remarkably larger than in metal/metal and metal/oxide interfaces and bulk heavy metals. The large SCI efficiency at such an oxidized interface makes it a promising candidate for the magnetic readout in MESO logic devices. |
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