Thermal effects on TiN/Ti/HfO<inf>2</inf>/Pt memristors charge conduction
TiN/Ti/HfO2/Pt resistive switching devices have been fabricated, measured, and modeled. After programming the devices in the low resistance state, the current-voltage characteristic below the reset switching voltage was measured at different temperatures (from 90 to 350 K). A weak but complex temper...
| Autores: | , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2022 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/360722 |
| Acceso en línea: | http://hdl.handle.net/10261/360722 https://api.elsevier.com/content/abstract/scopus_id/85144475508 |
| Access Level: | acceso abierto |
| Palabra clave: | Current voltage characteristics SPICE Temperature distribution Titanium nitride |
| Sumario: | TiN/Ti/HfO2/Pt resistive switching devices have been fabricated, measured, and modeled. After programming the devices in the low resistance state, the current-voltage characteristic below the reset switching voltage was measured at different temperatures (from 90 to 350 K). A weak but complex temperature dependence was obtained for several voltage regimes. These memristors belong to a wider set known as valence change memories, whose conductance is determined by the formation of conductive filaments (CFs) linked to a high density of oxygen vacancies in a dielectric sandwiched between two metal electrodes. This usually leads to ohmic conduction in the low resistance state. However, a non-linear current dependence has been also observed in the measured devices, in addition to symmetric current-voltage curves for positive and negative biases in the 0-0.6 V voltage range. Three different thermal dependences have been considered for explaining the whole set of experimental data. Two of them are linked to ohmic filamentary conduction; the CF shows a conductivity enhancement due to thermally activated mechanisms at low temperatures; on the contrary, a CF conductivity degradation is observed at the higher temperatures. Finally, an additional slightly higher value for the non-linear current component as the temperature rises has also been taken into account. A semiempirical compact model has been implemented including these conduction mechanisms and their corresponding temperature dependences, the device has been simulated in LT-Spice and the experimental currents have been correctly reproduced. |
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