Transport in random quantum dot superlattices
We present a model based on the two-dimensional transfer matrix formalism to calculate single-electron states in a random wide-gap semiconductor quantum dot superlattice. With a simple disorder model both the random arrangement of quantum dots (configurational disorder) and the spatial inhomogeneiti...
| Autores: | , , , |
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| Tipo de documento: | artigo |
| Data de publicação: | 2002 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositório: | Docta Complutense |
| Idioma: | inglês |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59350 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/59350 |
| Access Level: | Acceso aberto |
| Palavra-chave: | 538.9 Coherent Física de materiales |
| Resumo: | We present a model based on the two-dimensional transfer matrix formalism to calculate single-electron states in a random wide-gap semiconductor quantum dot superlattice. With a simple disorder model both the random arrangement of quantum dots (configurational disorder) and the spatial inhomogeneities of their shape (morphological disorder) are considered. The model correctly describes channel mixing and broadening of allowed energy bands due to elastic electron scattering by disorder. |
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