Electron transport across a Gaussian superlattice
We study the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Such structures act as efficient energy band-pass filters and, contrary to previous designs, it is expected to present a lower number of unintentional de...
| Authors: | , , , |
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| Format: | article |
| Publication Date: | 1999 |
| Country: | España |
| Institution: | Universidad Complutense de Madrid (UCM) |
| Repository: | Docta Complutense |
| Language: | English |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59361 |
| Online Access: | https://hdl.handle.net/20.500.14352/59361 |
| Access Level: | Open access |
| Keyword: | 538.9 Physics Applied Física de materiales |
| Summary: | We study the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Such structures act as efficient energy band-pass filters and, contrary to previous designs, it is expected to present a lower number of unintentional defects and, consequently, better performance. The j-V characteristic presents negative differential resistance with peak-to-valley ratios much greater than in conventional semiconductor superlattices. |
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