Electric-field control of exchange bias in multiferroic epitaxial heterostructures

The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing...

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Autores: Laukhin, Vladimir, Skumryev, Vassil Hristov, Martí, X., Hrabovsky, D., Sánchez Barrera, Florencio, García-Cuenca Varona, María Victoria, Ferrater Martorell, Cèsar, Varela Fernández, Manuel, 1956-, Lüders, R., Bobo, J. F., Fontcuberta i Griñó, Josep
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2006
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/13171
Acceso en línea:https://hdl.handle.net/2445/13171
Access Level:acceso abierto
Palabra clave:Electrònica quàntica
Semiconductors
Microelectrònica
Qunatum electronics
Microelectronics
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spelling Electric-field control of exchange bias in multiferroic epitaxial heterostructuresLaukhin, VladimirSkumryev, Vassil HristovMartí, X.Hrabovsky, D.Sánchez Barrera, FlorencioGarcía-Cuenca Varona, María VictoriaFerrater Martorell, CèsarVarela Fernández, Manuel, 1956-Lüders, R.Bobo, J. F.Fontcuberta i Griñó, JosepElectrònica quànticaSemiconductorsMicroelectrònicaQunatum electronicsSemiconductorsMicroelectronicsThe magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices.American Physical Society201020102006info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion4 p.application/pdfapplication/pdfhttps://hdl.handle.net/2445/13171Articles publicats en revistes (Física Aplicada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció digital del document proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevLett.97.227201Physical Review Letters, 2006, vol. 97, núm. 22, p. 227201-1-227201-4http://dx.doi.org/10.1103/PhysRevLett.97.227201(c) American Physical Society, 2006info:eu-repo/semantics/openAccessoai:recercat.cat:2445/131712026-05-29T05:05:01Z
dc.title.none.fl_str_mv Electric-field control of exchange bias in multiferroic epitaxial heterostructures
title Electric-field control of exchange bias in multiferroic epitaxial heterostructures
spellingShingle Electric-field control of exchange bias in multiferroic epitaxial heterostructures
Laukhin, Vladimir
Electrònica quàntica
Semiconductors
Microelectrònica
Qunatum electronics
Semiconductors
Microelectronics
title_short Electric-field control of exchange bias in multiferroic epitaxial heterostructures
title_full Electric-field control of exchange bias in multiferroic epitaxial heterostructures
title_fullStr Electric-field control of exchange bias in multiferroic epitaxial heterostructures
title_full_unstemmed Electric-field control of exchange bias in multiferroic epitaxial heterostructures
title_sort Electric-field control of exchange bias in multiferroic epitaxial heterostructures
dc.creator.none.fl_str_mv Laukhin, Vladimir
Skumryev, Vassil Hristov
Martí, X.
Hrabovsky, D.
Sánchez Barrera, Florencio
García-Cuenca Varona, María Victoria
Ferrater Martorell, Cèsar
Varela Fernández, Manuel, 1956-
Lüders, R.
Bobo, J. F.
Fontcuberta i Griñó, Josep
author Laukhin, Vladimir
author_facet Laukhin, Vladimir
Skumryev, Vassil Hristov
Martí, X.
Hrabovsky, D.
Sánchez Barrera, Florencio
García-Cuenca Varona, María Victoria
Ferrater Martorell, Cèsar
Varela Fernández, Manuel, 1956-
Lüders, R.
Bobo, J. F.
Fontcuberta i Griñó, Josep
author_role author
author2 Skumryev, Vassil Hristov
Martí, X.
Hrabovsky, D.
Sánchez Barrera, Florencio
García-Cuenca Varona, María Victoria
Ferrater Martorell, Cèsar
Varela Fernández, Manuel, 1956-
Lüders, R.
Bobo, J. F.
Fontcuberta i Griñó, Josep
author2_role author
author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Electrònica quàntica
Semiconductors
Microelectrònica
Qunatum electronics
Semiconductors
Microelectronics
topic Electrònica quàntica
Semiconductors
Microelectrònica
Qunatum electronics
Semiconductors
Microelectronics
description The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices.
publishDate 2006
dc.date.none.fl_str_mv 2006
2010
2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/13171
url https://hdl.handle.net/2445/13171
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció digital del document proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevLett.97.227201
Physical Review Letters, 2006, vol. 97, núm. 22, p. 227201-1-227201-4
http://dx.doi.org/10.1103/PhysRevLett.97.227201
dc.rights.none.fl_str_mv (c) American Physical Society, 2006
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Physical Society, 2006
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4 p.
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,81155

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